Advances in direct laser writing to attain super-resolution are required to improve fabrication performance and develop potential applications for nanophotonics. In this study, a novel technique using single-color peripheral photoinhibition lithography was developed to improve the resolution of direct laser writing while preventing the chromatic aberration characteristics of conventional multicolor photoinhibition lithography, thus offering a robust tool for fabricating 2D and 3D nanophotonic structures. A minimal feature size of 36 nm and a resolution of 140 nm were achieved with a writing speed that was at least 10 times faster than existing photoinhibition lithography. Super-resolution and fast scanning enable the fabrication of spin-decoupled metasurfaces in the visible range within a printing duration of a few minutes. Finally, a subwavelength photonic crystal with a near-ultraviolet structural color was fabricated to demonstrate the potential of 3D printing. This technique is a flexible and reliable tool for fabricating ultracompact optical devices.
For decades, photoinhibited two-photon
lithography (PI-TPL) has
been continually developed and applied into versatile nanofabrication.
However, ultrahigh precision fabrication on wafer by PI-TPL remains
challenging, due to the lack of a refractive index (n) matched photoresist (Rim-P) with effective photoinhibition capacity
for dip-in mode. In this paper, various Rim-P are developed and then
screened for their applications in PI-TPL. In addition, different
lithography methods (in terms of oil-mode and dip-in mode) are analyzed
by use of optical simulations combined with experiments. Remarkably,
one type of Rim-P (n = 1.518) shows effective photoinhibition
capacity, which represents an outstanding breakthrough in the field
of PI-TPL. In contrast to photoresist with an unsuitable refractive
index, optical aberrations are almost completely eliminated in the
dip-in mode by using the Rim-P. Consequently, features with a minimum
critical dimension as small as 39 nm are successfully achieved on
wafer by dip-in PI-TPL, which paves the way for subdiffraction silicon-based
chip manufacturing by PI-TPL. Moreover, through a combination of the
Rim-P and dip-in mode, the ability to achieve tall and high-precision
three-dimensional nanostructures is no longer problematic.
Beams with optical vortices are widely used in various fields, including optical communication, optical manipulation and trapping, and, especially in recent years, in the processing of nanoscale structures. However, circular vortex beams are difficult to use for the processing of chiral micro and nanostructures. This paper introduces a multiramp helical–conical beam that can produce a three-dimensional spiral light field in a tightly focused system. Using this spiral light beam and the two-photon direct writing technique, micro–nano structures with chiral characteristics in space can be directly written under a single exposure. The fabrication efficiency is more than 20 times higher than the conventional point-by-point writing strategy. The tightly focused properties of the light field were utilized to analyze the field-dependent properties of the micro–nano structure, such as the number of multiramp mixed screw-edge dislocations. Our results enrich the means of two-photon polymerization technology and provide a simple and stable way for the micromachining of chiral microstructures, which may have a wide range of applications in optical tweezers, optical communications, and metasurfaces.
Direct laser writing (DLW) enables arbitrary three-dimensional nanofabrication. However, the diffraction limit poses a major obstacle for realizing nanometer-scale features. Furthermore, it is challenging to improve the fabrication efficiency using the currently prevalent single-focal-spot systems, which cannot perform high-throughput lithography. To overcome these challenges, a parallel peripheral-photoinhibition lithography system with a sub-40-nm two-dimensional feature size and a sub-20-nm suspended line width was developed in our study, based on two-photon polymerization DLW. The lithography efficiency of the developed system is twice that of conventional systems for both uniform and complex structures. The proposed system facilitates the realization of portable DLW with a higher resolution and throughput.
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