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A Cu(2)S-CuInS(2)-ZnSe quantum dot (QD)-sensitized solar cell with cascaded energy gap structures has been fabricated. Under simulated illumination (AM 1.5, 100 mW cm(-2)), the best device is obtained with a Cu(2)S-CuInS(2)-ZnSe QD-sensitized solar cell, yielding a power conversion efficiency of 2.52%.

A cadmium-free CuInS2 quantum dot (QD)-sensitized solar cell (QDSC) has been fabricated by taking advantage of the ex situ synthesis approach for fabricating highly crystalline QDs and the in situ successive ionic-layer adsorption and reaction (SILAR) approach for achieving high surface coverage of QDs. The ex situ synthesized CuInS2 QDs can be rendered water soluble through a simple and rapid two-step method under the assistance of ultrasonication. This approach allows a stepwise ligand change from the insertion of a foreign ligand to ligand replacement, which preserves the long-term stability of colloidal solutions for more than 1 month. Furthermore, the resulting QDs can be utilized as sensitizers in QDSCs, and such a QDSC can deliver a power conversion efficiency (PCE) of 0.64%. Using the SILAR process, in situ CuInS2 QDs could be preferentially grown epitaxially on the pre-existing seeds of ex situ synthesized CuInS2 QDs. The results indicated that the CuInS2 QDSC fabricated by the combined ex situ/in situ growth process exhibited a PCE of 1.84% (short-circuit current density = 7.72 mA cm(-2), open-circuit voltage = 570 mV, and fill factor = 41.8%), which is higher than the PCEs of CuInS2 QDSCs fabricated by ex situ and in situ growth processes, respectively. The relative efficiencies of electrons injected by the combined ex situ/in situ growth approach were higher than those of ex situ synthesized CuInS2 QDs deposited on TiO2 films, as determined by emission-decay kinetic measurements. The incident photon-to-current conversion efficiency has been determined, and electrochemical impedance spectroscopy has been carried out to investigate the photovoltaic behavior and charge-transfer resistance of the QDSCs. The results suggest that the combined synergetic effects of in situ and ex situ CuInS2 QD growth facilitate more electron injection from the QD sensitizers into TiO2.

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Significant advances in microwave and millimeter wave technology over the past decade have enabled the development of a new generation of imaging diagnostics for current and envisioned magnetic fusion devices. Prominent among these are revolutionary microwave electron cyclotron emission imaging (ECEI), microwave phase imaging interferometers, imaging microwave scattering and microwave imaging reflectometer (MIR) systems for imaging T e and n e fluctuations (both turbulent and coherent) and profiles (including transport barriers) on toroidal devices such as tokamaks, spherical tori and stellarators. The diagnostic technology is reviewed, and typical diagnostic systems are analyzed. Representative experimental results obtained with these novel diagnostic systems are also presented. _______________________________________________________________________