A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4aq with Sns in the presence of CTACaq (cetyltrimethylammonium chloride) and NaNO3aq, which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 microm.

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With use of Sn(SiMe3)4 as the precursor, amorphous SiC1+ x thin films with Sn nanoparticles embedded were grown on Si substrates at 923 K by low-pressure chemical vapor deposition. After treatment under hydrogen plasma at 923 K, the Sn nanoparticles in the films were removed by an HF solution and by evaporation at 1423 K. Following the removal of Sn, high-temperature treatments at 1273−1423 K converted the amorphous thin films into mesoporous semiconducting β-SiC thin films with pore sizes 10−100 nm.

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Cubic shells and spherical nanoparticles of β‐SiC were produced at 1273 K by processing the ceramic precursors formed from the reactions between vapors of organochlorosilanes, Me2SiCl2, MeSiCl3, MeSiHCl2, and PhSiCl3, and liquid Na at 523‐723 K. From Me2SiCl2, a flexible linear polycarbosilane precursor was synthesized and covered the NaCl byproduct surface to form a cubic shape. Hollow cubic β‐SiC shells were produced after the NaCl templates were removed. From MeSiCl3, a rigid cross‐linked polycarbosilane was produced and phase segregated from the NaCl byproduct. The precursor was transformed into nanoparticles without special morphology. MeSiHCl2 produced a cross‐linked polysilane precursor at low temperatures, which can be converted into a mixture of β‐SiC and Si nanoparticles. At high temperatures, the polysilane converted to polycarbosilane and produced hollow cubic β‐SiC shells. The carbon‐rich PhSiCl3 generated cube‐like particles as the final product, which contained β‐SiC and carbon.