Deposition of Mesoporous Silicon Carbide Thin Films from (Me₃Si)₄Sn: Tin Nanoparticles as in Situ Generated Templates

Abstract

With use of Sn(SiMe3)4 as the precursor, amorphous SiC1+ x thin films with Sn nanoparticles embedded were grown on Si substrates at 923 K by low-pressure chemical vapor deposition. After treatment under hydrogen plasma at 923 K, the Sn nanoparticles in the films were removed by an HF solution and by evaporation at 1423 K. Following the removal of Sn, high-temperature treatments at 1273−1423 K converted the amorphous thin films into mesoporous semiconducting β-SiC thin films with pore sizes 10−100 nm.

Thermal Radiative Wavelength Selectivity of Nanostructured Layered Media

“…Here, we apply the Maxwell-Garnett-Mie formulation [17] for effective medium approximation to calculate the dielectric function of a composite that consists of a host material embedded with nanoparticles of various sizes and volume fractions, and extend the same approach to calculate radiative heat transfer for thin films doped with nanoparticles. Thin-film structure with nanoparticles would be easy to fabricate as submicron thin films embedded with nanoparticles have been fabricated before [18,19]. We aim to study the effect on the wavelength selectivity of thin films due to combination of surface polaritons of the films and the nanoparticles and their effects in the near-field radiative heat transfer and spectral heat flux.…”