The stacking of two-dimensional layered materials, such as semiconducting transition metal dichalcogenides (TMDs), insulating hexagonal boron nitride (hBN), and semimetallic graphene, has been theorized to produce tunable electronic and optoelectronic properties. Here we demonstrate the direct growth of MoS2, WSe2, and hBN on epitaxial graphene to form large-area van der Waals heterostructures. We reveal that the properties of the underlying graphene dictate properties of the heterostructures, where strain, wrinkling, and defects on the surface of graphene act as nucleation centers for lateral growth of the overlayer. Additionally, we show that the direct synthesis of TMDs on epitaxial graphene exhibits atomically sharp interfaces. Finally, we demonstrate that direct growth of MoS2 on epitaxial graphene can lead to a 10(3) improvement in photoresponse compared to MoS2 alone.

Tungsten ditelluride (WTe2) is a transition metal dichalcogenide (TMD) with physical and electronic properties that make it attractive for a variety of electronic applications. Although WTe2 has been studied for decades, its structure and electronic properties have only recently been correctly described. We experimentally and theoretically investigate the structure, dynamics and electronic properties of WTe2, and verify that WTe2 has its minimum energy configuration in a distorted 1T structure (Td structure), which results in metallic-like transport. Our findings unambiguously confirm the metallic nature of WTe2, introduce new information about the Raman modes of Td-WTe2, and demonstrate that Td-WTe2 is readily oxidized via environmental exposure. Finally, these findings confirm that, in its thermodynamically favored Td form, the utilization of WTe2 in electronic device architectures such as field effect transistors may need to be reevaluated.

Molybdenum ditelluride, MoTe2 , is emerging as an important transition-metal dichalcogenide (TMD) material because of its favorable properties relative to other TMDs. The 1T ' polymorph of MoTe2 is particularly interesting because it is semimetallic with bands that overlap near the Fermi level, but semiconducting 2H-MoTe2 is more stable and therefore more accessible synthetically. Metastable 1T '-MoTe2 forms directly in solution at 300 °C as uniform colloidal nanostructures that consist of few-layer nanosheets, which appear to exhibit an approx. 1 % lateral lattice compression relative to the bulk analogue. Density functional theory calculations suggest that small grain sizes and polycrystallinity stabilize the 1T ' phase in the MoTe2 nanostructures and suppress its transformation back to the more stable 2H polymorph through grain boundary pinning. Raman spectra of the 1T '-MoTe2 nanostructures exhibit a laser energy dependence, which could be caused by electronic transitions.

Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials that have attracted growing interest because of their unique electronic and optical properties. Under ambient conditions, most TMDs generally exhibit 2H or 1T structures. Unlike other group VIb TMDs, bulk crystals and powders of WTe2 exist in a distorted 1T structure (Td) at room temperature and have semimetallic properties. There is so far a lack of direct atom-by-atom visualization, limiting our understanding of this distorted 2D layered material system. We present herein atomic resolution images of Td structured WTe2. The Td structure can be distinguished in the three major orientations along the [100], [010], and [001] zone axes. Subtle structural distortions are detected by atomic resolution imaging, which match well with the optimized structure relaxed by ab initio calculations. The calculations also showed that both crystal field splitting and charge density wave (CDW) interactions contribute to the stabilization of WTe2. However, the CDW interaction dominates and leads the Td-WTe2 to be the most stable structure. The combined atomic resolution STEM and ab initio study on WTe2 provided the basis for understanding the correlations between atomic structure and electronic properties in Td structured TMD materials.