Using a modified Gaussian approximation to the depth distribution of the energy dissipation function for electron bombardment, an analytical expression was derived for electron-beam-induced current (EBIC) at a Schottky barrier parallel to the bombarded surface. Comparison of theory and experiment for the voltage dependence of EBIC for 14 specimens (including p- and n-type GaAs and Si) provided values for the diffusion length of excess carriers, the thickness of the metal layer of the Schottky barrier diode, and the average energy ℰ required to generate a hole-electron pair. Diffusion lengths ranging from 0.41 to 55 μ were determined with an estimated accuracy of ±20%. The values of ℰ were found to be 3.75±0.11 eV for Si and 4.68±0.14 eV for GaAs. The unique advantages of this method for measuring small diffusion lengths are emphasized.

In this paper we will review the power consumption of both AMLCD and AMOLED display technologies, outline roadmaps for future power savings, and discuss the technologies required to implement these savings. We will also analyze fundamental limits to the power consumption of these flat panel displays.

A homemade pendant drop/bubble tensiometer was assembled and applied to perform the surface-interfacial tension measurements for the binary water+ethylene glycol monobutyl ether (C4E1) mixture over the temperature range from 50 to 128 degrees C at 10 bar. The symbol CiEj is the abbreviation of a nonionic polyoxyethylene alcohol CiH2i+1(OCH2CH2)jOH. The wetting behavior of the C4E1-rich phase at the interface separating the gas and the aqueous phases was systematically examined according to the wetting coefficient calculated from the experimental results of surface/interfacial tensions. It was found that the C4E1-rich phase exhibits a sequence of wetting transitions, nonwetting-->partial wetting-->complete wetting, at the gas-water interface in the water+C4E1 system along with increasing the temperature, consistent with the conjecture of Kahlweit and Busse [J. Chem. Phys. 91, 1339 (1989)]. In addition, the relationship of the mutual solubility and the interfacial tension of the interface separating the C4E1-rich phase and the aqueous phase is discussed.

Colorectal cancer has become the third leading cause of death from cancer in Taiwan. Familial adenomatous polyposis (FAP) is an autosomal dominant inherited disease characterized by the presence of multiple adenomatous polyps in the colon and rectum. The gene responsible for FAP (APC) was cloned in 1991. Extensive analyses of the mutation spectra in FAP kindreds have been performed in different countries, but the results have been highly variable (30–80%). In this study, we used denaturing high-performance liquid chromatography (DHPLC) followed by automatic sequencing in an effort to establish the mutation spectrum of APC from DNA of peripheral blood cells. Among the 6 FAP probands analyzed, mutations were detected in 3 (50%), 2 of which were novel. The first novel mutation was at codon 2166, with a C to T transition, resulting in a stop codon. The second novel mutation was at codon 1971, with a C to G transversion, resulting in an amino acid change from serine to cysteine. The third mutation involved an A insertion in the sequence of -AAAAAA- at codons 1554–1556, which created a downstream stop codon (codon 1558). This study is the first to report mutation analysis in Taiwanese FAP probands.