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Interpenetrating polymer networks can become successful actuators in the field of microsystems providing they are compatible with microtechnologies. In this letter, we report on a material synthesized from poly͑3,4-ethylenedioxythiophene͒ and polytetrahydrofuran/poly͑ethylene oxide͒ and microsized by decreasing its thickness to 12 m and patterning the lateral side using plasma etching at high etch rates and with vertical sidewalls. A chemical process and a "self degradation" are proposed to explain such etching rates. Preliminary actuation results show that microbeams can move with very large displacements. These microsized actuators are potential candidates in numerous applications, including microswitches, microvalves, microoptical instrumentation, and microrobotics.

In this letter, two organic thin-film transistors with SiO2 and ferroelectric PbZrTiO3 (PZT) gate insulator are compared. The fabrication of the devices is described and their electrical properties estimated. The PZT-based devices show better performance: Low driving voltage, high Ion/Ioff ratio, etc. Moreover, a memory effect is reported in correlation with ferroelectric properties of PZT thin films.

The paper presents the results of measurements of the linear dielectric properties of the compounds from the homologous series of alkylcyanobiphenyls (C(n)H(2n+1)PhPhCN, nCB) in the vicinity of the first order transition (from the isotropic liquid to the crystalline phase) of nonmesogenic nCB's (n=2-4) and the weakly first order transition (from the isotropic liquid to the nematic phase) of 5CB. The experimental method for the separation of the critical part of the static permittivity derivative and the activation energy for rotation of the mesogenic molecules, in the vicinity of weakly first order phase transition, is proposed. It is shown that the critical temperature dependence of the permittivity and the activation energy can be described with a function of (T-T*)(-alpha) type, with the same values of the temperature of virtual transition of the second order (T*) and the critical exponent (alpha).

A fully integrated electromechanical resonator is described that is based on high mobility piezoelectric semiconductors for actuation and detection of nanoscale motion. We employ the two-dimensional electron gas present at an AlGaN/GaN interface and the piezoelectric properties of this heterostructure to demonstrate a resonant high-electron-mobility transistor enabling the detection of strain variation. In this device, we take advantage of the polarization field divergence originated by mechanical flexural modes for generating piezoelectric doping. This enables a modulation of carrier density which results in a large current flow and thus constitutes a motion detector with intrinsic amplification.