Here we report a method for improving the magnetic field sensitivity of an ensemble of Nitrogen-Vacancy (NV) centres in 12 C-enriched diamond aligned along the [111] crystal axis. The preferentially-aligned NV centres are fabricated by a Plasma Enhanced Chemical Vapour Deposition (PECVD) process and their concentration is quantitatively determined by analysing the confocal microscopy images. We further observe that annealing the samples at high temperature (1500 °C) in vacuum leads to a conversion of substitutional nitrogen into NV centres. This treatment also increases the coherence time of the NV centres electron spins up to 40 μs, which corresponds to enhancement of the sensitivity by a factor of three. However, this procedure also leads to a loss of the preferential alignment by 34%.

The negatively charged nitrogen-vacancy (NV) center in diamond has been shown recently as an excellent sensor for external spins. Nevertheless, their optimum engineering in the near-surface region still requires quantitative knowledge in regard to their activation by vacancy capture during thermal annealing. To this aim, we report on the depth profiles of near-surface helium-induced NV centers (and related helium defects) by step-etching with nanometer resolution. This provides insights into the efficiency of vacancy diffusion and recombination paths concurrent to the formation of NV centers. It was found that the range of efficient formation of NV centers is limited only to approximately 10 to 15 nm (radius) around the initial ion track of irradiating helium atoms. Using this information we demonstrate the fabrication of nanometric-thin (δ) profiles of NV centers for sensing external spins at the diamond surface based on a three-step approach, which comprises (i) nitrogen-doped epitaxial CVD diamond overgrowth, (ii) activation of NV centers by low-energy helium irradiation and thermal annealing, and (iii) controlled layer thinning by low-damage plasma etching. Spin coherence times (Hahn echo) ranging up to 50 μs are demonstrated at depths of less than 5 nm in material with 1.1% of (13)C (depth estimated by spin relaxation (T1) measurements). At the end, the limits of the helium irradiation technique at high ion fluences are also experimentally investigated.

Nitrogen-vacancy (NV) centres in diamond are appealing nano-scale quantum sensors for temperature, strain, electric fields and, most notably, for magnetic fields. However, the cryogenic temperatures required for low-noise single-shot readout that have enabled the most sensitive NVmagnetometry reported to date, are impractical for key applications, e.g. biological sensing. Overcoming the noisy readout at room-temperature has until now demanded repeated collection of fluorescent photons, which increases the time-cost of the procedure thus reducing its sensitivity. Here we show how machine learning can process the noisy readout of a single NV centre at room-temperature, requiring on average only one photon per algorithm step, to sense magnetic field strength with a precision comparable to those reported for cryogenic experiments. Analysing large data sets from NV centres in bulk diamond, we report absolute sensitivities of 60 nTs 1/2 including initialisation, readout, and computational overheads. We show that dephasing times can be simultaneously estimated, and that time-dependent fields can be dynamically tracked at room temperature. Our results dramatically increase the practicality of early-term single spin sensors. arXiv:1807.09753v1 [quant-ph]

We report on the isolation of single SiV − centers in nanodiamonds. We observe the fine-structure of single SiV − center with improved inhomogeneous ensemble linewidth below the excited state splitting, stable optical transitions, good polarization contrast and excellent spectral stability under resonant excitation. Based on our experimental results we elaborate an analytical strain model where we extract the ratio between strain coefficients of excited and ground states as well the intrinsic zero-strain spin-orbit splittings. The observed strain values are as low as best values in low-strain bulk diamond. We achieve our results by means of H-plasma treatment of the diamond surface and in combination with resonant and off-resonant excitation. Our work paves the way for indistinguishable, single photon emission. Furthermore, we demonstrate controlled nano-manipulation via atomic force microscope cantilever of 1D-and 2D-alignments with a so-far unreached accuracy of about 10 nm, as well as new tools including dipole rotation and cluster decomposition. Combined, our results show the potential to utilize SiV − centers in nanodiamonds for the controlled interfacing via optical coupling of individually well-isolated atoms for bottom-up assemblies of complex quantum systems.arXiv:1802.03588v4 [cond-mat.mes-hall]