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It is shown that the growth mode of cobalt on the Cu(110) surface at 350 K can be changed from three-dimensional to extended layer-by-layer growth by pre- and co-adsorption of oxygen. The shape and the intensity of the growth oscillations observed in thermal energy helium atom scattering experiments depends sensitively on the total oxygen coverage. Helium diffraction reveals that different oxygen induced surface reconstructions of the top-most Co layer are responsible for the presence or absence of layer-by-layer growth in an extended coverage range.

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It is shown that atomic hydrogen from a specially designed atomic beam source is well suited for removing chemisorbed oxygen from an fcc Co(110) film that has been grown on a Cu(110) substrate using oxygen as a surfactant. Exposing the oxygen-terminated Co surface to atomic hydrogen leads to a surface reaction which destroys the (3×1) ordered-O induced surface reconstruction of the Co film. Upon annealing at 380 K, the hydrogen remaining on the O-free Co surface can be completely desorbed. With this technique, it is possible for the first time to prepare about 15 monolayers thick, atomically-flat fcc Co(110) films.