How to use oxygen and atomic hydrogen to prepare atomically flat fcc Co(110) films

Tölkes, Christian; David, Rudolf; Tschersich, K. G.; Comşa, George; Zeppenfeld, P.

doi:10.1209/epl/i1999-00304-5

Cited by 15 publications

(16 citation statements)

References 28 publications

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“…The preliminary and final versions were constructed several times and utilized in other laboratories. [3][4][5][6][7][8][9] Finally Schuler revised the technical details of the source to optimize its fabrication. The present version of the source is sketched in Fig.…”

Section: Source Designmentioning

confidence: 99%

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Design and characterization of a thermal hydrogen atom source

Tschersich

Fleischhauer

Schüler³

2008

Journal of Applied Physics

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The hydrogen atom source considered here incorporates a hot capillary fed by hydrogen gas. Our earlier measurements on a source heated by electron bombardment are interpreted in terms of a simple model which encourages us to design a source heated by the radiation from a filament. The radiatively heated source is much simpler, more reliable, and easier to run than the electronically heated source. Furthermore, the radiatively heated source is free of any energetic particles. In order to obtain quantitative data on the intensity, an apparatus is constructed revealing the angular distribution of the hydrogen atoms and molecules by means of a quadrupole mass analyzer. The intensity of the source is controlled by the mass flow rate of the feed gas and the electric power to the filament. The flux density of hydrogen atoms at a substrate 6 cm away from the source is variable over two orders of magnitude and extends up to some 1015 atoms/cm2 s.

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Section: Source Designmentioning

confidence: 99%

“…They are used to clean surfaces, e.g., of Si, 1 GaAs, 2 and Co, 3 and to cover surfaces in studies of adsorption, 4 recombination, 5,6 and desorption. 7 In thin film deposition, hydrogen atoms are incorporated into the growing film.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of a thermal hydrogen atom source

Tschersich

Fleischhauer

Schüler³

2008

Journal of Applied Physics

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“…Surface adsorbates, or "additives," can profoundly change both the dynamics of mass transport and the equilibrium morphology. These effects of adsorbates have been revealed by studies of surface faceting and step bunching, [1][2][3][4] film growth, [5][6][7][8][9][10][11][12][13] island shapes, 11 reconstruction, [14][15][16] coarsening, 17,18 step fluctuations, 19 and other phenomena.…”

Section: Introductionmentioning

confidence: 99%

Adsorbate-enhanced transport of metals on metal surfaces: Oxygen and sulfur on coinage metals

Thiel

Shen

Liu

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Coarsening (i.e., ripening) of single-atom-high, metal homoepitaxial islands provides a useful window on the mechanism and kinetics of mass transport at metal surfaces. This article focuses on this type of coarsening on the surfaces of coinage metals (Cu, Ag, Au), both clean and with an adsorbed chalcogen (O, S) present. For the clean surfaces, three aspects are summarized: (1) the balance between the two major mechanisms-Ostwald ripening (the most commonly anticipated mechanism) and Smoluchowski ripening-and how that balance depends on island size; (2) the nature of the mass transport agents, which are metal adatoms in almost all known cases; and (3) the dependence of the ripening kinetics on surface crystallography. Ripening rates are in the order (110)>(111)>(100), a feature that can be rationalized in terms of the energetics of key processes. This discussion of behavior on the clean surfaces establishes a background for understanding why coarsening can be accelerated by adsorbates. Evidence that O and S accelerate mass transport on Ag, Cu, and Au surfaces is then reviewed. The most detailed information is available for two specific systems, S/Ag (111) and S/Cu(111). Here, metal-chalcogen clusters are clearly responsible for accelerated coarsening. This conclusion rests partly on deductive reasoning, partly on calculations of key energetic quantities for the clusters (compared with quantities for the clean surfaces), and partly on direct experimental observations. In these two systems, it appears that the adsorbate, S, must first decorate-and, in fact, saturate-the edges of metal islands and steps, and then build up at least slightly in coverage on the terraces before acceleration begins. Acceleration can occur at coverages as low as a few thousandths to a few hundredths of a monolayer. Despite the significant recent advances in our understanding of these systems, many open questions remain. Among them is the identification of the agents of mass transport on crystallographically different surfaces e.g., 111, 110, and 100. KeywordsAmes Laboratory, Materials Science and Engineering, Mathematics, Physics and Astronomy Disciplines Biological and Chemical Physics | Materials Science and Engineering | Mathematics | Physical Chemistry CommentsThe following article appeared in Journal of Vacuum Science and Technology A 28, no. 6 (2010) Coarsening ͑i.e., ripening͒ of single-atom-high, metal homoepitaxial islands provides a useful window on the mechanism and kinetics of mass transport at metal surfaces. This article focuses on this type of coarsening on the surfaces of coinage metals ͑Cu, Ag, Au͒, both clean and with an adsorbed chalcogen ͑O, S͒ present. For the clean surfaces, three aspects are summarized: ͑1͒ the balance between the two major mechanisms-Ostwald ripening ͑the most commonly anticipated mechanism͒ and Smoluchowski ripening-and how that balance depends on island size; ͑2͒ the nature of the mass transport agents, which are metal adatoms in almost all known cases; and ͑3͒ the dependence of the ripe...

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“…Probing the reactivity of free H . radicals towards isolated molecules or surfaces has been an expanding field of research with applications in diverse areas ranging from materials science and catalysis,1 to astrophysics,2 and to biochemistry 3. For instance, exchange of H‐atoms with T .…”

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confidence: 99%

Generation of hydrogen radicals for reactivity studies in Fourier transform ion cyclotron resonance mass spectrometry

Demirev

2000

Rapid Commun. Mass Spectrom.

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An efficient technique for generation of H* (D*) radicals in Fourier transform ion cyclotron resonance (FTICR) mass spectrometry is described. The method allows the probing of the reactivity of gas-phase H* radicals towards various ions isolated in the cell of an FTICR mass spectrometer. Results on interactions of H* and D* radicals with trapped positive or negative C60 fullerene ions, as well as singly charged peptide ions, are presented. Hydrogen radical addition or H/D-exchange reactions between trapped ions and free H* (D*) radicals were observed. Potential implementation of the technique for probing the gas-phase three-dimensional structures of polyatomic ions is discussed as well.

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How to use oxygen and atomic hydrogen to prepare atomically flat fcc Co(110) films

Cited by 15 publications

References 28 publications

Design and characterization of a thermal hydrogen atom source

Design and characterization of a thermal hydrogen atom source

Adsorbate-enhanced transport of metals on metal surfaces: Oxygen and sulfur on coinage metals

Generation of hydrogen radicals for reactivity studies in Fourier transform ion cyclotron resonance mass spectrometry

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