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In this paper, we present a capacitive, MEMS-based accelerometer comprising an ultra-low noise CMOS integrated readout-IC and a high-precision bulk micro machined sensing element. The resulting accelerometer reaches an acceleration equivalent noise of only 200 ng/√Hz, which makes it suitable for seismic measurement that require noise levels significantly below 1 µg/√Hz. Additionally, a high bandwidth of more than 5 kHz was achieved, which also makes the presented sensor system applicable for high-frequency measurements, e.g. in predictive maintenance applications for rotating machinery. The design of the sensing element and readout IC is presented in detail and measurement results are shown which demonstrate the performance of the sensor system.

Abstract. In this paper we present a readout circuit for capacitive micro-electro-mechanical system (MEMS) sensors such as accelerometers, gyroscopes or pressure sensors. A flexible interface allows connection of a wide range of types of sensing elements. The ASIC (application-specific integrated circuit) was designed with a focus on ultra-low noise operation and high analog measurement performance. Theoretical considerations on system noise are presented which lead to design requirements affecting the reachable overall measurement performance. Special emphasis is put on the design of the fully differential operational amplifiers, as these have the dominant influence on the achievable overall performance. The measured input referred noise is below 50 zF/ √Hz within a bandwidth of 10 Hz to 10 kHz. Four adjustable gain settings allow the adaption to measurement ranges from ±750 fF to ±3 pF. This ensures compatibility with a wide range of sensor applications. The full input signal bandwidth ranges from 0 Hz to more than 50 kHz. A high-precision accelerometer system was built from the described ASIC and a high-sensitivity, low-noise sensor MEMS. The design of the MEMS is outlined and the overall system performance, which yields a combined noise floor of 200 ng/ √ Hz, is demonstrated. Finally, we show an application using the ASIC together with a CMOS integrated capacitive pressure sensor, which yields a measurement signal-to-noise ratio (SNR) of more than 100 dB.

Since micro- and nanostructures for photon management are of increasing importance in novel high-efficiency solar cell concepts, structuring techniques with up-scaling potential play a key role in their realization. Interference lithography and nanoimprint processes are presented as technologies for origination and replication of fine-tailored photonic structures on large areas. At first, these structure origination and replication technologies are presented in detail: With the interference pattern of two or more coherent waves, a wide variety of structures with feature sizes ranging from 100 nm to 100 µm can be generated in photoresist by interference lithography. Examples are linear gratings, crossed gratings, hexagonal structures, three dimensional photonic crystals or surface-relief diffusers. The strength of this technology is that homogeneous structures can be originated on areas of up to 1.2 x 1.2 m2. The structures in photoresist, the so-called master structures, can serve as an etching mask for a pattern transfer, as a template for infiltration with different materials or they can be replicated via electroplating and subsequent replication processes. Especially in combination with replication steps, the industrially feasible production of elaborate structures is possible. As a particularly interesting process, nanoimprint lithography (NIL) is described in detail. As a way towards industrial production, a roller NIL tool is presented. After the description of the basic technologies, three application examples for solar cells are presented with details about the design of the structures, the structuring processes, sample characterization and evaluation: (1) honeycomb structures for the front side texturization of multicrystalline silicon wafer solar cells, (2) diffractive rear side gratings for absorption enhancement in the spectral region near the band gap of silicon, and (3) plasmonic metal nanoparticle arrays manufactured by combined imprint and lift off processes

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