A SiGe HBT technology featuring f T /f max /BV CEO =300GHz/ 500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to our previous SiGe HBT generations originates from lateral device scaling, a reduced thermal budget, and changes of the emitter and base composition, of the salicide resistance as well as of the low-doped collector formation.

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The high-frequency performance of a novel SiGe HBT module with mono-crystalline base link is investigated in an industrial 0.13 µm BiCMOS environment. The main feature of this new HBT module is a significant reduction of the external base resistance as shown here by direct comparison with a conventional double-poly-silicon technology. Peak f T /f max values of 300 GHz/500 GHz are achieved. A minimum CML ring oscillator gate delay of 1.8 ps and a record operation frequency for a SiGe static frequency divider of 161 GHz are demonstrated.

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