SiGe:C HBT architecture with epitaxial external base

Fox, A.; Heinemann, B.; Barth, R.; Marschmeyer, S.; Wipf, Christian; Yamamoto, Yuji

doi:10.1109/bctm.2011.6082751

Cited by 24 publications

(22 citation statements)

References 3 publications

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“…By the help of non-standard technology elements the feasibility of f max values around 500 GHz could be shown [6]- [9]. The recently proposed SEG HBT process in which an epitaxial base link (EBL) is formed after emitter fabrication [7] offers a potential way to overcome limitations of the classical DPSA technology in forming a more conductive baselink suitable for ongoing lateral scaling. However, a reliable estimation of the performance advantage of the EBL HBT with respect to the standard DPSA approach was not possible so far due to the use of different collector constructions and different transistor topologies in the respective technologies.…”

Section: Introductionmentioning

confidence: 99%

Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Fox

Heinemann

Rücker

et al. 2015

IEEE Electron Device Lett.

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The high-frequency performance of a novel SiGe HBT module with mono-crystalline base link is investigated in an industrial 0.13 µm BiCMOS environment. The main feature of this new HBT module is a significant reduction of the external base resistance as shown here by direct comparison with a conventional double-poly-silicon technology. Peak f T /f max values of 300 GHz/500 GHz are achieved. A minimum CML ring oscillator gate delay of 1.8 ps and a record operation frequency for a SiGe static frequency divider of 161 GHz are demonstrated.

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Section: Introductionmentioning

confidence: 99%

Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Fox

Heinemann

Rücker

et al. 2015

IEEE Electron Device Lett.

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“…The goal of this letter is to show the outstanding performance of SiGe HBTs. Through an optimization of process and circuit layout, τ gate was reduced from 2.72 ps [9] to 1.65 ps that is significantly lower than the previously reported value of 1.9 ps [10]. The RO architecture of this letter is similar to [9], [10].…”

Section: Introductionmentioning

confidence: 64%

“…Through an optimization of process and circuit layout, τ gate was reduced from 2.72 ps [9] to 1.65 ps that is significantly lower than the previously reported value of 1.9 ps [10]. The RO architecture of this letter is similar to [9], [10]. Process technology and device performance are presented in Section II, followed by the RO circuit description in Section III.…”

Section: Introductionmentioning

confidence: 94%

“…3(a), measured τ gate of the previous research [9], the recent record [10] and the optimized B5T RO_VI design are plotted versus voltage swing. The output spectrum of the latter circuit is shown in Fig.…”

Section: Circuit Performancementioning

confidence: 99%

“…(a) Measured τ gate of the previous research[9] (B4T), the recent record[10], and the optimized B5T RO_VI design are plotted versus singleended voltage swing for a CBEBC HBT with an effective emitter area of A E,B4T = 0.13 μm × 4.9 μm and A E,B5T = 0.12 μm × 4.94 μm. (b) Output spectrum of B5T RO_VI with the fundamental oscillation frequency of 5.93 GHz, corresponding to a gate delay of 1.58 ps and a fundamental output power P out of −4.83 dBm.…”

mentioning

confidence: 99%

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Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology

Weiß¹,

Majek²,

Sahoo³

et al. 2013

IEEE Electron Device Lett.

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In this letter, we report a record gate delay of 1.65 ps of a current-mode logic ring oscillator (RO) fabricated with an advanced SiGe:C heterojunction bipolar transistor technology. Outstanding performance has been achieved through process and layout optimization and inductive peaking in series with the load resistor. The RO operates at a single-ended voltage swing of 200 mV. The transistors used in the RO exhibit a peak transit frequency f T of 310 GHz and a peak maximum oscillation frequency f max of 400 GHz. To the best of our knowledge, a gate delay of 1.65 ps is the fastest result for a bipolar transistor-based technology.Index Terms-Heterojunction bipolar transistors (HBT), microwave circuits, ring oscillators (ROs), semiconductor device measurement, silicon germanium (SiGe).

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