Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the full spin texture in momentum space for such materials and its relation to the microscopic structure of the electronic wave functions is experimentally challenging and yet essential for exploiting spin–orbit effects for spin manipulation. Here we employ a state-of-the-art photoelectron momentum microscope with a multichannel spin filter to directly image the spin texture of the layered polar semiconductor BiTeI within the full two-dimensional momentum plane. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the valence and conduction band electrons in BiTeI have spin textures of opposite chirality and of pronounced orbital dependence beyond the standard Rashba model, the latter giving rise to strong optical selection-rule effects on the photoelectron spin polarization. These observations open avenues for spin-texture manipulation by atomic-layer and charge carrier control in polar semiconductors.
The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te-and I-terminated surface areas
The ferromagnetic topological insulator V:(Bi,Sb) 2 Te 3 has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the contribution of the V atoms to the electronic structure. Here the valence band of V:(Bi,Sb) 2 Te 3 thin films was probed in an element-specific way by resonant photoemission spectroscopy. The signature of the V 3d impurity band was extracted and exhibits a high density of states near Fermi level, in agreement with spin-polarized first-principles calculations. Our results indicate the occurrence of a ferromagnetic superexchange interaction mediated by the observed impurity band, contributing to the ferromagnetism in this system.
The kinetic energy distributions of photo-electrons emitted from gold surfaces under illumination by UV-light close to the threshold are measured and analyzed. Samples are prepared as chemically clean through Ar-Ion sputtering and then exposed to atmosphere for variable durations before Quantum Yield measurements are performed after evacuation. During measurements the bias voltage applied to the sample is varied and the resulting emission current measured. Taking the derivative of the current-voltage curve yields the energy distribution which is found to closely resemble the distribution of total energies derived by DuBridge for emission from a free electron gas. We investigate the dependence of distribution shape and width on electrode geometry and contaminant substances adsorbed from the atmosphere, in particular to water and hydrocarbons. Emission efficiency increases initially during air exposure before diminishing to zero on a timescale of several hours, whilst subsequent annealing of the sample restores emissivity. A model fit function, in good quantitative agreement with the measured data, is introduced which accounts for the experiment-specific electrode geometry and an energy dependent transmission coefficient. The impact of large patch potential fields from contact potential drops between sample and sample holder is investigated. The total quantum yield is split into bulk and surface contributions which are tested for their sensitivity to light incidence angle and polarization. Our results are directly applicable to model parameters for the contact-free discharge system onboard the LISA Pathfinder spacecraft.
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