Since the breakthrough by Kodak in 1987, organic light-emitting diodes (OLEDs) have been seen as one of the most promising technologies for future displays. A number of materials have been developed and improved in order to fulfil the requirements of this application. The materials differ from one another by their structure but also by the mechanism involved in the electroluminescence produced (fluorescence versus phosphorescence). When properly stacked, these materials result in a device that can achieve the required high efficiency and long lifetime. Such red, green and blue devices can then be combined in matrices to become the core of a display. Building up these structures onto a display backplane is one of the challenges facing the industry. The circuitry for driving the pixels can be adapted to the OLED, sometimes at the expense of the simplicity of the display, but bearing in mind that the fabrication process must remain industrially viable.

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This work aims at explaining and predicting the influence of dye doping and space charge effects on charge carrier transport at different operating temperatures. For that purpose, currentvoltage J-V characteristics for typical electrically-doped multilayer OLEDs have been simulated. The results are in good agreement with experiment.

Abstract— This work aims at explaining and predicting the influence of the thickness of organic materials, dye doping, and space‐charge effects on charge‐carrier transport at different operating temperatures for high current densities (50 ≤ J ≤ 7000 mA/cm2). For the purpose of determining these influences, current‐voltage characteristics for typical electrically doped multilayer organic light‐emitting diodes (OLEDs) have been simulated. The results of the simulations concur with experimental data.