We perform a systematic theoretical and numerical study of anti-parallel two-dimensional magnetic reconnection with asymmetries in the plasma density and reconnecting magnetic field strength in addition to a bulk flow shear across the reconnection site in the plane of the reconnecting fields, which commonly occurs at planetary magnetospheres. We analytically predict the speed at which an isolated X-line is convected by the flow, the reconnection rate, and the critical flow speed at which reconnection no longer takes place for arbitrary reconnecting magnetic field strengths, densities, and upstream flow speeds, and we confirm the results with two-fluid numerical simulations. The predictions and simulation results counter the prevailing model of reconnection at Earth's dayside magnetopause which says reconnection occurs with a stationary X-line for sub-Alfvénic magnetosheath flow, reconnection occurs but the X-line convects for magnetosheath flows between the Alfvén speed and double the Alfvén speed, and reconnection does not occur for magnetosheath flows greater than double the Alfvén speed. In particular, we find that X-line motion is governed by momentum conservation from the upstream flows, which are weighted differently in asymmetric systems, so the X-line convects for generic conditions including sub-Alfvénic upstream speeds. For the reconnection rate, as with symmetric reconnection, it drops with increasing flow shear and there is a cutoff speed above which reconnection is not predominant. However, while the cutoff condition for symmetric reconnection is that the difference in flows on the two sides of the reconnection site is twice the Alfvén speed, we find asymmetries cause the cut-off speed for asymmetric reconnection to be higher than twice the asymmetric form of the Alfvén speed. The stronger the asymmetries, the more the cutoff exceeds double the asymmetric Alfvén speed. This is due to the fact that in asymmetric reconnection, the plasma with the smaller mass flux into the dissipation region contributes a smaller mass to the dissipation region, so the effect of its flow on opposing the release of energy by the reconnected magnetic fields is diminished and the reconnection is not suppressed to the extent previously thought. The results compare favorably with an observation of reconnection at Earth's polar cusps during a period of northward interplanetary magnetic field, where reconnection occurs despite the magnetosheath flow speed being more than twice the magnetosheath Alfvén speed, the previously proposed suppression condition. These results are expected to be of broad importance for magnetospheric physics of Earth and other planets; particular applications are discussed.

An electron beam experiences chromatic emittance growth in a plasma-based accelerator if it is not matched to the focusing force in the plasma wake. A ramped plasma density profile at the entrance and exit of the plasma source can control the focusing of the beam into and out of the plasma accelerator, limiting emittance growth. Here, we present a comprehensive, analytic theory to describe the transverse beam dynamics and emittance growth in a nearly arbitrary plasma ramp profile. For a given incoming beam, this theory can be used to determine the length of the ramp required to correctly focus the electron beam, the optimal location of the beam's vacuum focus, and the chromatic emittance growth in the ramp. In addition, the theory can be used to determine the effect that errors in the beam focusing and plasma profile have on the emittance of the beam. We illustrate two example ramps to demonstrate the theory: one that provides very fast focusing for beam matching, and one that is robust to errors in the plasma density profile.

We investigate magnetic reconnection in systems simultaneously containing asymmetric (anti-parallel) magnetic fields, asymmetric plasma densities and temperatures, and arbitrary in-plane bulk flow of plasma in the upstream regions. Such configurations are common in the high-latitudes of Earth's magnetopause and in tokamaks.We investigate the convection speed of the X-line, the scaling of the reconnection rate, and the condition for which the flow suppresses reconnection as a function of upstream flow speeds. We use two-dimensional particle-in-cell simulations to capture the mixing of plasma in the outflow regions better than is possible in fluid modeling.We perform simulations with asymmetric magnetic fields, simulations with asymmetric densities, and simulations with magnetopause-like parameters where both are asymmetric. For flow speeds below the predicted cutoff velocity, we find good scaling agreement with the theory presented in Doss et al., J. Geophys. Res., 120, 7748 (2015). Applications to planetary magnetospheres, tokamaks, and the solar wind are discussed.

We present a laser-ionized, beam-driven, passive thin plasma lens that operates in the nonlinear blowout regime. This thin plasma lens provides axisymmetric focusing for relativistic electron beams at strengths unobtainable by magnetic devices. It is tunable, compact, and it imparts little to no spherical aberrations. The combination of these features make it more attractive than other types of plasma lenses for highly divergent beams. A case study is built on beam matching into a plasma wakefield accelerator at SLAC National Accelerator Laboratory's FACET-II facility. Detailed simulations show that a thin plasma lens formed by laser ionization of a gas jet reduces the electron beam's waist beta function to half of the minimum value achievable by the FACET-II final focus magnets alone.

Articles you may be interested inMBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers J. Vac. Sci. Technol. B 31, 03C106 (2013); 10.1116/1.4792516 Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates J.Comparison of mixed anion, InAs y P 1−y and mixed cation, In x Al 1−x As metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates J. Appl. Phys. 95, 3952 (2004); 10.1063/1.1667006 Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafersMetamorphic buffers ͑M-buffers͒ consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors ͑M-HEMTs͒, while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 20-30 Å. The Hall transport properties of high electron mobility transistors ͑HEMTs͒ grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities Ͼ10 000 cm 2 /V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm 2 /V s. Similarly, the dc parameters of a double heterojunction bipolar transistor ͑DHBT͒ grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.