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In this paper we summarize production data from serial 10 Gb/s devices and report on 850 nm VCSEL arrays with channel speeds up to 25 Gb/s. The production data demonstrates that robustness of the basic technology as well as its suitability for cost effective, high volume production. The >10 Gb/s measurements on two dimensional arrays show that 850 nm VCSEL technology can be extended well beyond the 10 Gb/s links currently beginning to be deployed by volume field users.

Our studies of device lifetime and the main degradation mechanisms in Nichia blue LEDs date back to Spring 1994.Following the initial studies ofrapid failures under high current electrical pulses, where metal migration was identified as the cause of degradation, we have placed a number ofNichia NLPB-500 LEDs on a series oflife tests. The first test ran for 1000 hours under normal operating conditions (20 mA at 23 °C). As no noticeable degradation was observed, the second room temperature test was performed with the same devices but with a range of currents between 20 and 70 mA. After 1600 hours, some degradation in output intensity was observed in devices driven at 60 and 70 mA, but it was still less than 20%. The subsequent tests included stepping up the temperature by 10 °C in 500 h intervals up to a fmal temperature of 95 °C using the same currents applied in the second test. This work reviews the failure analysis that was performed on the degraded devices and the degradation mechanisms that were identified.