Electrophoresis deposition (EPD) of nanodiamond was found to be a very efficient process in forming the nucleation sites for the growth of ultrananocrystalline diamond (UNCD) films. Transmission electron microscopic investigations showed that the EPD-derived UNCD films grown on planar Si substrates contain uniform granular structure with sharp, smooth, and conductive UNCD-to-Si interface layer, which helps in better electron field emission (EFE) properties of the UNCD films. Moreover, contrary to ultrasonication process for nucleating the diamond, the EPD process is a gentle one that induced no damage to the silicon nanowire arrays (SiNWs), facilitating the formation of nuclei for growing UNCD films on SiNWs. Such a gentle process significantly enhanced the EFE properties of UNCD/SiNWs. The EPD-derived UNCD/SiNW emitters show superior EFE performances to the planar UNCD films, that is, a turn-on field of 7.19 V/μm and a large EFE current density of 2.21 mA/cm2 at 15.0 V/μm. Furthermore, a parallel plate plasma device fabricated using the EPD-derived UNCD/SiNW nanostructures as cathode shows a high Ar plasma current value of 3.5 mA/cm2 at a low applied field of 0.35 V/μm. These results demonstrate that these EPD-derived UNCD/SiNW nanostructures have great potential for the applications in flat panel displays due to their superior EFE properties and plasma illumination performances.

The properties of capacity-type microplasma devices were significantly enhanced due to the utilisation of hybrid diamond films as cathodes. The performance of the microplasma devices was closely correlated with the electron field emission (EFE) properties of the diamond cathode materials. The nanoemitters, which were prepared by growing duplex-structured diamond films [microcrystalline diamond (MCD)/ultra-nanocrystalline diamond (UNCD)] on Si-pyramid templates via a two-step microwave plasma enhanced chemical vapour deposition (MPE-CVD) process, exhibited improved EFE properties (E0 = 5.99 V μm(-1), J(e) = 1.10 mA cm(-2) at 8.50 V μm(-1) applied field), resulting in superior microplasma device performance (with a lower threshold field of 200 V mm(-1) and a higher plasma current density of 7.80 mA cm(-2)) in comparison with UNCD film devices prepared using a single-step MPE-CVD process. The superior EFE properties of the duplex-structured MCD-UNCD films relative to those of the UNCD films can be attributed to the unique granular structure of the diamond films. High-resolution transmission electron microscopy reveals that the MCD-UNCD films consisted of abundant graphitic phases located at the periphery of large diamond aggregates and at the boundaries between the ultra-small diamond grains. The presence of the graphite phase is presumed to be the prime factor that renders these films more conductive and causes these films to exhibit higher EFE properties, thus resulting in the improved plasma illumination properties of the microplasma devices.

Enhanced electron field emission (EFE) behavior of a core-shell heterostructure, where ZnO nanorods (ZNRs) form the core and ultrananocrystalline diamond needles (UNCDNs) form the shell, is reported. EFE properties of ZNR-UNCDN core-shell heterostructures show a high emission current density of 5.5 mA cm(-2) at an applied field of 4.25 V μm(-1) , and a low turn-on field of 2.08 V μm(-1) compared to the 1.67 mA cm(-2) emission current density (at an applied field of 28.7 V μm(-1) ) and 16.6 V μm(-1) turn-on field for bare ZNRs. Such an enhancement in the field emission originates from the unique materials combination, resulting in good electron transport from ZNRs to UNCDNs and efficient field emission of electrons from the UNCDNs. The potential application of these materials is demonstrated by the plasma illumination measurements that lowering the threshold voltage by 160 V confirms the role of ZNR-UNCDN core-shell heterostructures in the enhancement of electron emission.

Vertically aligned conducting ultrananocrystalline diamond (UNCD) nanorods are fabricated using the reactive ion etching method incorporated with nanodiamond particles as mask. High electrical conductivity of 275 Ω·cm−1 is obtained for UNCD nanorods. The microplasma cavities using UNCD nanorods as cathode show enhanced plasma illumination characteristics of low threshold field of 0.21 V/μm with plasma current density of 7.06 mA/cm2 at an applied field of 0.35 V/μm. Such superior electrical properties of UNCD nanorods with high aspect ratio potentially make a significant impact on the diamond-based microplasma display technology.

No abstract