2012
DOI: 10.1186/1556-276x-7-522
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Microplasma illumination enhancement of vertically aligned conducting ultrananocrystalline diamond nanorods

Abstract: Vertically aligned conducting ultrananocrystalline diamond (UNCD) nanorods are fabricated using the reactive ion etching method incorporated with nanodiamond particles as mask. High electrical conductivity of 275 Ω·cm−1 is obtained for UNCD nanorods. The microplasma cavities using UNCD nanorods as cathode show enhanced plasma illumination characteristics of low threshold field of 0.21 V/μm with plasma current density of 7.06 mA/cm2 at an applied field of 0.35 V/μm. Such superior electrical properties of UNCD n… Show more

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Cited by 27 publications
(14 citation statements)
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“…The data trend was reflected by an accompanying change in film morphology. C 2 dimers are considered the main precursors for NCD growth, because they promote secondary nucleation rate and limit the extension of the one-dimensional diamond nanostructures [16]. As nitrogen is introduced into the gas mixture, N 2 is converted into CN radicals, which do not participate in diamond growth, but act as a catalyst for increasing the rate of diamond growth [14].…”
Section: Resultsmentioning
confidence: 99%
“…The data trend was reflected by an accompanying change in film morphology. C 2 dimers are considered the main precursors for NCD growth, because they promote secondary nucleation rate and limit the extension of the one-dimensional diamond nanostructures [16]. As nitrogen is introduced into the gas mixture, N 2 is converted into CN radicals, which do not participate in diamond growth, but act as a catalyst for increasing the rate of diamond growth [14].…”
Section: Resultsmentioning
confidence: 99%
“…Nanodiamond particles spread on conducting N‐UNCD films can be used as the etch mask to fabricate vertically aligned conducting N‐UNCD nanorods, as reported by Sankaran et al . These nanorods are highly conductive ( σ = 275 Ω −1 cm −1 ).…”
Section: Understanding Of the Enhancement Of Conductivity And Efe In mentioning
confidence: 97%
“…The presence of sp 2 phase is possibly caused by the ion bombardment damage on sp 3 -bonded carbon induced in the RIE O 2 plasma etching process. 17,46 On the basis of micro-Raman spectroscopy and HAADF-STEM investigations, the DGH nanorod is actually a nanohybrid material, consisting of nano-sized diamond grains (sp 3 -bonded carbon) and nanographites (sp 2 -bonded carbon) located in the boundaries between the diamond grains. The nanographitic phase transported the electrons upward and transferred the electrons to the tip of DGH nanorods for field emitting.…”
Section: -2mentioning
confidence: 99%