No abstract

To evaluate the effects of repeated deep-frying on the trans-fatty acid (TFA) formation in soybean oils, simultaneous frying experiments were carried out. French fries were prepared using three different types of soybean oil (pressed soybean oil, PSBO; first-grade solvent extracted soybean oil, FG-SESBO; and thirdgrade solvent extracted soybean oil, TG-SESBO). French fries were fried intermittently at 180-1858C for a total frying time of 32 h and at an interval time of 30 min. It was found that the initial amount of total TFAs was 0.29 g/100 g, 0.31 g/100 g, and 0.90 g/100 g in PSBO, TG-SESBO, and FG-SESBO, respectively. Before the frying started, the C18:1,t-9, trans-linoleic acid (TLA), trans-linolenic acid (TLNA), and total TFA content of the PSBO and TG-SESBO were significantly lower than in the FG-SESBO ( p<0.05). However, in the frying oil samples, the final concentration of total TFA in the PSBO, TG-SESBO, and FG-SESBO were 1.79 AE 0.17 g/100 g, 1.12 AE 0.10 g/100 g, and 1.70 AE 0.07 g/100 g, which was 6.17-, 3.61-, and 1.89-fold higher that in fresh oil, respectively. The highest increasing slopes of C18:1,t-9, TLA, TLNA, and total TFA were observed in the PSBO.Practical applications: A high intake of TFAs has been shown to lead to an increased risk of coronary heart disease. Plant oils, particularly soybean oil, have been widely used in the food industry in China. Frying is one of the most common methods to cook food. The formation of TFAs during frying has been shown to be closely related to the temperature and duration of the frying process. However, the effects of frying on the formation of TFAs in different soybean oils have not been well studied. In the present study, we demonstrated that increasing the number of frying cycles can cause an intensive increase in the concentration of TFAs in different types of soybean oil, but especially in PSBO.Abbreviations: FAME, fatty acid methyl ester; FG-SESBO, first-grade solvent extracted soybean oil; PSBO, pressed soybean oil; TFA, transfatty acid; TG-SESBO, third-grade solvent extracted soybean oil Eur.

In order to provide excellent performance and show the development of a complicated structure in a module and system, this paper presents a double air-bridge-structured symmetrical differential inductor based on integrated passive device technology. Corresponding to the proposed complicated structure, a new manufacturing process fabricated on a high-resistivity GaAs substrate is described in detail. Frequency-independent physical models are presented with lump elements and the results of skin effect-based measurements. Finally, some key features of the inductor are compared; good agreement between the measurements and modeled circuit fully verifies the validity of the proposed modeling approach. Meanwhile, we also present a comparison of different coil turns for inductor performance. The proposed work can provide a good solution for the design, fabrication, modeling, and practical application of radio-frequency modules and systems.

We present a highly efficient structural color filtering approach for large-area application, using a nanoporous anodic alumina (NAA) film overlaid with an aluminum (Al) layer on top of an optically thick Al substrate. The NAA film, consisting of a self-assembled nanopore array in a hexagonal lattice, is equivalent to a quasi-homogeneous medium according to effective medium theory. The proposed structure enables strong absorption at resonance owing to the Fabry–Perot resonance supported by the metal-dielectric-metal configuration and the plasmonic effect mediated by the top nanoporous Al layer. The reflection colors can be readily tuned by altering the NAA thickness that is determined by anodization time, thereby allowing the flexible creation of complicated color images on a single platform. By fabricating three samples with different NAA thicknesses in a large area of 2 cm × 2 cm, it is confirmed that the proposed color filtering scheme exhibits highly enhanced color purity and high reflection efficiency of up to 73%, which is superior to that generated by previously reported NAA-based approaches. The presented strategy can pave the way for the efficient fabrication of large-area color filtering devices for various potential applications, including color display devices, imaging sensors, structural color printing, and photovoltaic cells.

The dependencies of hot-carrier-induced degradations on the effective channel length 𝐿 ch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor (MOSFETs). Our experiments find that, with decreasing 𝐿 ch,eff , the saturation drain current (𝐼 dsat ) degradation is unexpectedly alleviated. The further study demonstrates that the anomalous 𝐿 ch,eff dependence of 𝐼 dsat degradation is induced by the increasing influence of the substrate current degradation on the 𝐼 dsat degradation with 𝐿 ch,eff reducing.