This paper proposes a circuit topology which reduces the chip size of single-pole-double-throw (SPDT) quarter-wavelength bandpass filter-integrated switches (FIS). A 40-GHz mHEMT MMIC SPDT switch has been implemented and demonstrates a measured insertion loss lower than 1 dB and an isolation better than 30 dB. Another 50-GHz pHEMT MMIC SPDT achieves 1.5 dB insertion loss and 22 dB isolation. The low insertion loss and high isolation shows that the circuit performance is improved along with the reduction of the size. The systematic design approach of the reduced-size FIS is described, together with the analysis of the insertion loss and isolation.

No abstract

No abstract

A balanced PA covering 68-83 GHz is developed in 90nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P 1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.Index Terms -CMOS, power amplifier (PA), millimeter-wave (MMW), MMIC

No abstract