A 68&amp;#x2013;83 GHz power amplifier in 90 nm CMOS

Lee, Jeffrey; Chen, Chung-Chun; Tsai, Jen-Han; Lin, Kun-You; Wang, Huei

doi:10.1109/mwsym.2009.5165727

Cited by 16 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This leads to the significant decrement in output power. In order to achieve higher output power, the transistors can be combined by direct shunt combining 3-dB couplers and transformers [73][74][75][76][77][78][79][80][81]. Direct shunt combining is the simplest combining architecture to combine the current of each PA cell, in turn; the output power is enlarged.…”

Section: Power Amplifier (Pa)mentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

Self Cite

View full text Add to dashboard Cite

Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

show abstract

Section: Power Amplifier (Pa)mentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

Self Cite

View full text Add to dashboard Cite

show abstract

“…The DC bias and current is through M6 layer and no DC current is through aluminum layer to avoid the electromigration issue. The size of the input transformer is 26 36 with a trace width of 5 and the size of the output transformer is 30 42 with a trace width of 6 . The technology allows the maximum current density per unit width drops significantly from 110 to 125 .…”

Section: Power Amplifier Designmentioning

confidence: 99%

Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology

Lin

Hammock

et al. 2010

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a +9 1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11 4-dBm output power at in = 1 9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range ( 40 C to 125 C) at 77 GHz range.

show abstract

“…3-dB coupler is another combining technique used in PA designs, including Wilkinson power combiner [11], [12] and quadrature coupler [13], [14]. The combining network design is straight forward since 3-dB coupler adds 3-dB output power directly with given PA units.…”

Section: Introductionmentioning

confidence: 99%

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Hsiao

Tsai

Liao

et al. 2013

IEEE Trans. Microwave Theory Techn.

Self Cite

107

View full text Add to dashboard Cite

In this paper, we propose a design method of multi-way combining networks with impedance transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output power and wideband performance simultaneously in millimeter-wave frequency. Based on the proposed methodology, three power amplifiers are designed and fabricated in V-band, W-band, and D-band using 65-nm CMOS technology. With 1.2-V supply, the saturation powers of these power amplifiers are 23.2 dBm, 18 dBm and 13.2 dBm at 64 GHz, 90 GHz, and 140 GHz, with 25.1-GHz, 26-GHz, and 30-GHz 3-dB bandwidth, respectively. Compared with the published MMW amplifiers, these PAs achieve high output power and wide band performances simultaneously, and the ouput power levels is the state-of-the-art performance at these frequencies.Index Terms-CMOS, high output power, impedance transformation, millimeter-wave, power amplifier, power combining, wideband.

show abstract

A 68–83 GHz power amplifier in 90 nm CMOS

Cited by 16 publications

References 8 publications

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Contact Info

Product

Resources

About