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This paper presents the design and measured performance of an X-band to Ka-band SiGe HBT SPDT switch. The proposed SPDT switch was fabricated using a 200 nm, 150 GHz peak f T silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. The SPDT switch design uses diode-connected SiGe HBTs in a series-shunt configuration to improve the switch bandwidth and isolation. Between 8 and 40 GHz, this SPDT switch achieves an insertion loss of less than 4.3 dB, an isolation of more than 20.3 dB, and a return loss of more than 9 dB.Index Terms-Broadband, series/shunt switch, SiGe, SPDT switch, transmit/receive (T/R) module.

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