Low-power and low-voltage X-band silicon-germanium heterojunction bipolar transistor low-noise amplifier

Poh, Chung Hang John; Seth, Sachin; Schmid, Robert; Cressler, John D.; Papapolymerou, John

doi:10.1049/iet-map.2012.0224

Cited by 4 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Transistors are the key components of the microwave electronics, particularly in design of the low‐noise amplifier (LNAs) for use in hand‐held or battery‐operated receivers. Since this type of design requires the miniature LNA with a very low power consumption from a very low supply voltage , but high gain G T , low input V in and output V out Standing Wave Ratios, low noise figure F along the available operating bandwidth B , therefore this work is one of the big challenges to Ultra‐Wideband (UWB) transceiver integrations . The first level of this challenge is to select fast and low‐noise, high quality transistors, which is of course the matter of the available technology.…”

Section: Introductionmentioning

confidence: 99%

A simple and efficient honey bee mating optimization approach to performance characterization of a microwave transistor for the maximum power delivery and required noise

Güneş

Demi̇rel

Mahoutı

2015

Int J Numerical Modelling

View full text Add to dashboard Cite

In this work, a simple, efficient and multi objective Honey Bee Mating Optimization (HBMO) is presented for the performance characterization of a microwave transistor to deliver maximum power to the load with the required noise F req . Thus all the possible compatible {F req ≥ F min , V out = 1, G Tmax } triplets and the corresponding source Z S and load Z L = Z * out (Z S ) terminations can be obtained in the device operation domain of (V DS , I DS and f) without working analytically for the nonlinear performance and stability equations. HBMO is a recently emerging metaheuristic algorithm that combines the powers of the simulated annealing and genetic algorithms. Here, a microwave transistor is chosen as a case study, effectiveness and efficiency of the HBMO are shown by comparing its performance to those of the standard meta-heuristics Genetic and Particle Swarm algorithms and the mean cost results for 10 runs are found to be 0.22, 1.65 and 1.85, respectively, for the comparable execution times. Furthermore, all the numerical results are found to agree with their analytical counterparts obtained using the microwave, linear circuit and noise theories. The Feasible Design Target Space FDTS can be built by the cross relations among all the possible compatible {F req ≥ F min , V out = 1, G Tmax } triplets together their terminations {Z S , Z L = Z * out (Z S )} covering all the possible amplifier designs where both noise figure and output power are at a premium. Copyright

show abstract

Section: Introductionmentioning

confidence: 99%

A simple and efficient honey bee mating optimization approach to performance characterization of a microwave transistor for the maximum power delivery and required noise

Güneş

Demi̇rel

Mahoutı

2015

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

“…Decreasing power and increasing operating frequency tend to degrade both the noise and gain performances. Another recent study reports an ultra-low-power and low-voltage LNA (F = 3.1 dB, G T = 8.5 dB at f = 10 GHz work [6]) with 0.5 mW dc power implemented in a 200 nm, 150 GHz peak f T silicon-germanium (SiGe) heterojunction bipolar transistor BiCMOS process technology. In this experimental work, the emitter length has been selected for a good trade-off between the noise and input mismatch at the forward active and weak saturation modes to lower the direct current power.…”

Section: Introductionmentioning

confidence: 99%

Performance characterization of a microwave transistor subject to the noise and matching requirements

Güneş

Demi̇rel

2015

Circuit Theory & Apps

View full text Add to dashboard Cite

In this paper, the gain G T of a microwave transistor is expressed analytically in terms of the mismatchings (V in ≥ 1, V out ≥ 1) at the ports, noise figure F ≥ F min and the [z]-parameter and noise parameters. Firstly, because the input termination Z S determines the noise F ≥ F min , thus the input termination Z S is pre-determined to lie on the tangent constant noise and available gain circles so that the maximum power delivery is ensured for the given noise. Then, a design configuration is constructed in the input impedance Z in -plane covering the gain and the required input and output mismatch circles within the Unconditionally Stable Working Area for the predetermined input termination Z S . Finally, the compatible (F ≥ F min , G T , V in ≥ 1, V out ≥ 1) quadrates for either required or optimum (V in ≥ 1, V out ≥ 1) couples are obtained with their (Z S , Z L ) couples from the analysis of the design configuration. Furthermore, a case study is also presented for the full flexible performance characterization of a selected microwave transistor. It can be concluded that the near future microwave transistor is expected to be identified by performance data base built by its compatible (F ≥ F min , G T , V in ≥ 1, V out ≥ 1) quadrates and the (Z S , Z L ) terminations within the device operation domain to overview all the possible low-noise amplifier designs using the full device capacity. produce high technology transistor, which is, of course, a matter of the semiconductor technology. However, the second stage is to be able to utilize the full capacity of the high technology device that necessitates to analyze the potential performance of the device based on the linear circuit and noise theories and construct the trade-off relations simultaneously among the noise, gain, mismatch losses, bias condition V DS , I DS , and operation frequency f. Thus, a feasible design target space can be built subject to the potential performance of the active device to overview all possible designs using the full capacity of the device. Otherwise, the design targets will generally either fail to be satisfied or allow working the circuit under the potential performance of the device.However, today's conventional LNA design flow consists of trading-off based on the designer's experience and intuition among the often contrasting goals of low noise, high gain, and input and output matches in either iterative or non-iterative approach; none of which are not based on the full capacity of the device. Furthermore, series or shunt feedback is assessed to ease the noise/gain trade-off at the LNA's input, by bringing closer, in the source reflection coefficient plane, the optimum noise (Г opt ) and the maximum gain terminations at the device's input port [7][8][9][10][11][12].A different design approach that consists of evaluating the noise/gain trade-off at the transistor level is introduced by Haus and Adler [13], with a new term 'noise measure (M)' tying the two key performance components of the amplifier, then this methodology is subs...

show abstract

An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P_1dB

Davulcu

Çalışkan

Kalyoncu

et al. 2018

IEEE Trans. Circuits Syst. II

View full text Add to dashboard Cite

Low-power and low-voltage X-band silicon-germanium heterojunction bipolar transistor low-noise amplifier

Cited by 4 publications

References 16 publications

A simple and efficient honey bee mating optimization approach to performance characterization of a microwave transistor for the maximum power delivery and required noise

A simple and efficient honey bee mating optimization approach to performance characterization of a microwave transistor for the maximum power delivery and required noise

Performance characterization of a microwave transistor subject to the noise and matching requirements

An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P_1dB

Contact Info

Product

Resources

About

Low-power and low-voltage X-band silicon-germanium heterojunction bipolar transistor low-noise amplifier

Cited by 4 publications

References 16 publications

A simple and efficient honey bee mating optimization approach to performance characterization of a microwave transistor for the maximum power delivery and required noise

A simple and efficient honey bee mating optimization approach to performance characterization of a microwave transistor for the maximum power delivery and required noise

Performance characterization of a microwave transistor subject to the noise and matching requirements

An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P1dB

Contact Info

Product

Resources

About

An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P_1dB