An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P<sub>1dB</sub>

Davulcu, Murat; Çalışkan, Can; Kalyoncu, İlker; Gürbüz, Yaşar

doi:10.1109/tcsii.2018.2800284

Cited by 15 publications

(9 citation statements)

References 11 publications

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“…The chip size of the LNA is 1 mm 2 including all the testing pads and the buffer. TCAS 2018 [26] MWCL 2016 [27] IETMAP 2009 [28] TMTT 2014 [29] TCAS 2018 [30] VLSI 2012 [31] MWCL 2007 [32] EuMC 2014 [33] This work Frequency (GHz) The results show good agreement with measured data over the entire frequency range of interest. The proposed triple-cascode LNA has the advantages of good noise performance and good gain flatness across 8-12 GHz.…”

Section: Discussionsupporting

confidence: 62%

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

Cao

Wang

et al. 2021

IET Circuits, Devices & Syst

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A pole-converging X-band low-noise amplifier (LNA) using 130 nm CMOS technology is proposed. An on-chip pole-converging capacitor C PC is added between the gate and drain node of the common-gate (CG) stage. The capacitor C PC combines with a noisereducing inductor L 1 to converge poles into the desired band, which results in a poleconverging effect and wideband performance. The proposed modified broadband simultaneous noise and input-matching technique is adopted in triple-cascode configuration to realize good input matching and a low noise figure (NF). Measurement results exhibit a flat maximum power gain of 17.6 dB from 8 to 12 GHz and a reverse isolation over 60 dB within the desired bandwidth along with an NF ranging from 1.5 to 3.6 dB. The LNA core dissipates 17 mW from 2.4 V supply, and the chip size occupies 1.1 � 0.9 mm 2 including all pads. The simulated and measured results show good agreement from 8 to 12 GHz.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Discussionsupporting

confidence: 62%

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

Cao

Wang

et al. 2021

IET Circuits, Devices & Syst

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“…There have been recent reports for designing and fabricating GaAs‐based LNAs, 3–5 switches, 6,7 and multiphase clock generators, 8 using 0.15 and 0.25 μm technology. LNAs based on other competitive technologies, CMOS, 9–13 and SiGe BiCMOS 14,15 have also been reported in the literature recently. CMOS technology has the advantage of high integration density and low cost, 16 whereas GaAs 1 and SiGe 17 have better noise performances.…”

Section: Introductionmentioning

confidence: 99%

Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Zafar

Akoglu

Aras

et al. 2022

Circuit Theory & Apps

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In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN on a SiC HEMT process. Owing to the optimum choice of HEMT topologies and simultaneous matching technique, LNA achieves a noise figure better than 2 dB, output power at 1 dB gain compression higher than 19 dB, input and output reflection coefficients better than À9 and À11 dB, respectively. The small-signal gain of LNA is more than 19 dB for the whole band, and NF has a minimum of 1.74 dB at 10.2 GHz. LNA obtains an OIP3 up to 34.2 dBm and survives input power as high as 42 dBm. Survivability is investigated in terms of gain compression and forward gate current. Reverse recovery time (RRT), a crucial parameter for radar front-ends, is explored with respect to the RC time constant and trap phenomenon. The analysis shows that the significant contribution in RRT is due to traps while the RC time constant is in the nanoseconds range. Moreover, this study also addresses the requirement and choice of a DC gate feed resistor for the subsequent stages in a multi-stage design. The size of the designed LNA chip is 3 mm Â 1.2 mm only.

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“…On the other hand, gallium arsenide (GaAs) technology takes an edge regarding noise performance. 1,2,3,4,5 There are recently reported works 6,7,8,9 with promising NF for other competitive technologies, that is, SiGe BiCMOS and CMOS. A comparative noise investigation from DC -60 GHz, using 70 nm GaAs, and 60 nm GaN-on-Si processes, has shown superior noise performance of the GaAs process for most of the frequency range.…”

Section: Introductionmentioning

confidence: 99%

“…The impedance between the base–collector terminals of common‐emitter HBT is considered by Çalışkan et al 7 to achieve sub‐1 dB NF. Davulcu et al 8 presented the first triple inductively degenerated cascode SiGe HBT in X‐band. Kumar and Rebeiz 9 have proposed X‐ and K‐band LNAs with a method of noise match optimization with respect to the base inductor in a 0.18 μm SiGe HBT technology.…”

Section: Introductionmentioning

confidence: 99%

Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure

Zafar

Aras

Akoglu

et al. 2022

Int J RF Mic Comp-Aid Eng

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GaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band lownoise amplifier (LNA). This NF is comparable with state-of-the-art reported works in competitive GaAs and SiGe technologies. Moreover, this is the best reported NF in X-band using GaN technology to date. Two LNAs are fabricated using in-house 0.15 μm AlGaN/GaN on the SiC HEMT process. LNA-1 has inductive source degenerated (ISD) HEMTs at both stages, while LNA-2 has ISD HEMT at the first and common source at the second stage. The significance of ISD HEMT, for the first or subsequent stages in a multi-stage design, towards NF improvement is addressed. The criticality of stability networks towards NF contribution and its design is discussed in detail. Furthermore, even-mode stability of each HEMT after complete LNA design is assured using the S-probe method in Pathwave Advanced Design Systems.

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An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P_1dB

Cited by 15 publications

References 11 publications

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure

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An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P1dB

Cited by 15 publications

References 11 publications

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure

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An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P_1dB