TiO2 nucleated anorthite‐based glass‐ceramics were fabricated from glass powders. After sintering and crystallization heat treatment, various physical properties, including apparent bulk density and water absorption, were examined to evaluate the sintering behavior of anorthite‐based glass‐ceramic. Results showed that the complete‐densification temperature for specimens was as low as 900°C. Sufficient crystallization was achieved by subsequently raising the firing temperature to 950°C, and the dielectric quality factor was promoted to the maximum value. Contents of nucleating agent (TiO2) played an important role in the dielectric constants. The crystallinity was controlled by raising the firing temperature at a constant heating rate. The degree of crystallization affected the dielectric properties of sintered glass‐ceramics. At the resonant frequency of 10 GHz, anorthite glass‐ceramics with 5 wt% TiO2 possessed the lowest permittivity of 8 and exhibited appropriate dielectric properties as compared with those with B2O3 and 10 wt% TiO2.
This paper presents one wafer level packaging approach of quartz resonator based on through-silicon via (TSV) interposer with metal or polymer bonding sealing of frequency components. The proposed silicon-based package of quartz resonator adopts several three-dimensional (3D) core technologies, such as Cu TSVs, sealing bonding, and wafer thinning. It is different from conventional quartz resonator using ceramic-based package. With evaluation of mechanical structure design and package performances, this quartz resonator with advanced silicon-based package shows great manufacturability and excellent performance to replace traditional metal lid with ceramic-based interposer fabrication approach.
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