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Articles you may be interested inEffects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors J. Appl. Phys. 113, 084501 (2013); 10.1063/1.4791760 Performance improvement of GaN-based ultraviolet metal-semiconductor-metal photodetectors using chlorination surface treatment J. Vac. Sci. Technol. B 30, 031211 (2012); 10.1116/1.4711215Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers Gallium nitride ͑GaN͒ ultraviolet metal-semiconductor-metal photodetectors ͑PDs͒ grown on Si substrates were demonstrated. The dark current of PDs fabricated on Si substrates was substantially smaller in magnitude compared to identical devices prepared on sapphire substrates. With an incident wavelength of 359 nm, the maximum responsivities of the n − -GaN MSM photodetectors with TiW and Ni/ Au contact electrodes were 0.187 and 0.0792 A / W, corresponding to quantum efficiencies of 64.7% and 27.4%, respectively. For a given bandwidth of 1 kHz and a given bias of 5 V, the corresponding noise equivalent powers of our n − -GaN MSM photodetectors with TiW and Ni/ Au electrodes were 1.525ϫ 10 −12 and 5.119ϫ 10 −12 W, respectively. Consequently, the values of detectivity ͑D * ͒ determined for devices with TiW and Ni/ Au electrodes were then calculated to be 1.313ϫ 10 12 and 3.914ϫ 10 11 cm Hz 0.5 W −1 , respectively.

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