Figure 8. Switching energy versus delay for a 32-bit ALU comprised of 2D GeC FETs under HP conditions, compared with other alternatives.

No abstract

No abstract

Two-dimensional (2D) materials with excellent properties can inhibit short-channel effects and are considered the next generation of channel materials. Here, we investigate the electronic properties of a new planar 2D semiconductor B 2 S 3 and device performance limits of 2D B 2 S 3 double-gated metaloxide-semiconductor field-effect transistors (MOSFETs) via ab initio simulations. The monolayer B 2 S 3 possesses a direct band gap of 1.87 eV. The MOSFETs can also fulfill the International Technology Roadmap for Semiconductor (ITRS) requirements for high-performance (HP) devices, even if the channel length is reduced to 4 nm. Specifically, the 10 nm monolayer B 2 S 3 n-MOSFETs have an extremely high on-state current I on value of 4279 μA/μm and low subthreshold swing (SS) of 18 mV/dec When taking underlap structure into account, the performances of n-type B 2 S 3 MOSFETs can fulfill the HP ITRS even if the gate length is only 3 nm. Thus, we think 2D B 2 S 3 is an attractive channel material for ultrascaled electronic devices.