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Experimental observations of the energy-dependent electron-beam penetration in type II-A natural diamond are reported. The experimental data are compared with results obtained from numerical Monte Carlo simulations, and the results are in very good agreement. The results also reveal that a threshold energy of about 125 keV is necessary for complete penetration for a 35 µm sample. It is found that over the 30-180 ke V range, the energy dependence of the penetration depth and total path length exhibits a power-law relation. Monte Carlo simulations have also been performed to investigate the excess carrier-generation profiles within diamond for a set of incident e-beam energy distributions. The simulation results demonstrate the feasibility of tailoring the internal source function, and hence influencing the diffusion currents, the internal electric fields, and charge injection throµgh the contacts.

We are developing a high voltage, high average power, electron-beam controlled diiamond switch that could significantly impact high power solid-state electronics in industrial and defense applications. An electron-beam controlled thin-film diamond could switch well over 100 kW average power at MHz frequencies, greater than 5 k'V, and with high efficiency. This performance is due to the excelknt thermal and electronic properties of diamond, the high efficiency achieved with electron beam control, and the demonstrated effectiveness of microchamel cooling. Our electron beam penetration depth measurements agree with our Monte-Carlo calculations. We have not observed electron beam damage in diamond for beam energies up to 150 keV. In this paper we describe our experimental and calculational results and research objectives.