GLOBALFOUNDRIES’ monolithic 45nm CMOS-Silicon Photonics 300mm high-volume manufacturing platform based on 45nm RF technology node, and optimized for high performance and low power short-reach optical interconnects for on-chip and chip-to-chip applications will be discussed.

We review recent progress in loss reduction of Si and SiN waveguides in GLOBALFOUNDRIES 300mm monolithic Si photonics platform. Primary challenges to creating low-loss CMOS integrated photonic components are highlighted and potential solutions are outlined.

We report a fiber-attach solution interfacing self-aligned, standard-cleaved fibers to monolithic photonic integrated circuits, fabricated in Globalfoundries 300-mm CMOS production facilities. Statistical yield analysis and reliability assessment were performed to demonstrate the robustness of the proposed solution.

A beam shaping approach has been implemented to realize high-performance waveguide crossings based on cosine tapers. Devices with a compact footprint of 4.7 µ m × 4.7 µ m were fabricated on the GLOBALFOUNDRIES 45 nm monolithic silicon photonics platform (45 CLO technology). Fabricated devices are found to be nearly wavelength independent ( ± 0.035 d B for 1260 n m ≤ λ ≤ 1360 n m ) with low insertion loss ( ∼ 0.2 d B ) and crosstalk ( − 35 d B ). The measured response of the devices is consistent with the three-dimensional finite-difference time-domain simulation results. The design stability is validated by measuring the device insertion loss on eight chips, which is found to be 0.197 ± 0.017 d B at the designed center wavelength of 1310 nm.

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