Abstract— Carbon‐nanotube (CNT) films on plastic are incorporated as the touch electrode in a four‐wire resistive touch panel. Single‐point actuation tests show superior mechanical performance to ITO touch electrodes, with no loss of device functionality up to 3 million actuations. Sliding‐stylus‐pen tests reveal no loss of device linearity after 1 million stylus cycles. A CNT refractive index of ∼1.55 leads to CNT touch panels with low reflection (<9% over the visible range) without costly anti‐reflective coatings. CNT films on PET currently have 86% total transmission (including the PET) over the visible and 600 Ω/□, with lab scale tests giving 88% at 500 Ω/□. CNT films are neutrally colored (a* ∼ 0, b* ∼ 1.5), low haze (<1%), uniform, and both chemically and environmentally stable. Unidym's solution‐based coatings can be printed directly onto both flexible and rigid polycarbonate using solution coating processes. Unidym films can be patterned using subtractive methods such as laser ablation with resolution down to 10 μm, or additive methods such as patterned gravure. CNTs are grown, purified, formulated into inks, and coated using scalable processes, allowing films to be attractive from a cost perspective as well.

InP / Si substrates were fabricated through wafer bonding and helium-induced exfoliation of InP, and InGaAs solar cells lattice matched to bulk InP were grown on these substrates using metal-organic chemical-vapor deposition. The photovoltaic characteristics of the InGaAs cells fabricated on the wafer-bonded InP / Si substrates were comparable to those synthesized on commercially available epiready InP substrates, thus providing a demonstration of wafer-bonded InP / Si substrates as an alternative to bulk InP substrates for solar cell applications.

Large area, crack-free GaInP / GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/ Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.

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Large area, crack-free GaInP / GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/ Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.