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The dynamics of a thixotropic silica aerosil gel dispersed in an octylcyanobiphenyl liquid crystal were directly probed by x-ray intensity fluctuation spectroscopy. For all samples, the time-autocorrelation function of the gel was well described by a modified-exponential function over the q range studied. Compared to a pure gel sample, a dilute (0.06 g cm(-3)) gel embedded within the liquid crystal displayed more complex and temperature dependent dynamics. Near the second-order smectic-A-to-nematic phase transition of the liquid crystal the gel relaxation became significantly more complex and slower (tau approximately 2150 s) compared to relaxations observed well within either phase. This clearly demonstrates coupling between the dynamics of the gel and the host liquid crystal, consistent with critical slowing down of smectic and director fluctuations. A random dampening field, elastically coupled to the liquid crystal, would explain the earlier observed crossover of this transition towards 3d-XY behavior.

We demonstrate quantitative noninterferometric x-ray phase-amplitude measurement. We present results from two experimental geometries. The first geometry uses x rays diverging from a point source to produce high-resolution holograms of submicrometer-sized objects. The measured phase of the projected image agrees with the geometrically determined phase to within +/-7%. The second geometry uses a direct imaging microscope setup that allows the formation of a magnified image with a zone-plate lens. Here a direct measure of the object phase is made and agrees with that of the magnified object to better than +/-10%. In both cases the accuracy of the phase is limited by the pixel resolution.

An integrated circuit interconnect was subject to accelerated-life test conditions to induce an electromigration void. The silicon substrate was removed, leaving only the interconnect test structure encased in silica. We imaged the sample with 1750 eV photons using the 2-ID-B scanning transmission x-ray microscope at the Advanced Photon Source, a third-generation synchrotron facility. Fourteen views through the sample were obtained over a 170°range of angles ͑with a 40°g ap͒ about a single rotation axis. Two sampled regions were selected for three-dimensional reconstruction: one of the ragged end of a wire depleted by the void, the other of the adjacent interlevel connection ͑or ''via''͒. We applied two reconstruction techniques: the simultaneous iterative reconstruction technique and a Bayesian reconstruction technique, the generalized Gaussian Markov random field method. The stated uncertainties are total, with one standard deviation, which resolved the sample to 200Ϯ70 and 140Ϯ30 nm, respectively. The tungsten via is distinguished from the aluminum wire by higher absorption. Within the void, the aluminum is entirely depleted from under the tungsten via. The reconstructed data show the applicability of this technique to three-dimensional imaging of buried defects in submicrometer structures relevant to the microelectronics industry.

This letter describes quantitative nondestructive measurements of multilayer submicron Cu/SiO2 interconnect structures such as Cu lines, vias, and W lines with lateral dimensions down to 300 nm and electromigration defect structures using scanning transmission x-ray microscopy employing a 0.2 μm x-ray beam. Typical measurement accuracies are ⩽60 nm for widths and lengths and ⩽10% in height. The high-resolution and nondestructive nature of this technique provide a very powerful probe of physical properties of nanoscale and submicron materials and structures.