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Two thick layers of calcium silicide with different compositions have been formed and studied. A procedure of layer-by-layer deposition of Ca at 130 °C and 500 °C on a previously formed layer of amorphous Si or on a polycrystalline Si layer were used. Electronic spectroscopy has shown that Ca 2 Si is formed at 130 °C, but Ca 3 Si 4 is formed at 500 °C. According to photoreflectance spectroscopy and Raman spectroscopy data the Ca 3 Si 4 film grown at 500 °C has a polycrystalline structure, in which strong direct interband transitions at 0.89 and 0.912 eV are observed.Physics, Chemistry and Applications of Nanostructures Downloaded from www.worldscientific.com by UNIVERSITY OF BIRMINGHAM on 08/24/15. For personal use only.