We investigated the effect of two-monolayer thick protection layers of GaN and AlGaN at the well growth temperature after the growth of InGaN well in InGaN/GaN MQW structures by MOCVD. The protection layers were very effective in inhibiting the re-evaporation of indium atoms regardless of the growth of GaN barriers at high temperature from TEM and PL. In addition, the use of GaN barrier grown at high temperature using GaN protection layers improved the emission efficiency due to the growth of high quality GaN without indium desorption. From the thermal treatment of as-grown samples, the redshift of emission was observed, which was ascribed to the increased quantum confined Stark effect by thermal stress, showing negligible indium gathering and atomic intermixing.

The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and NH3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and NH3 were less than those observed for the nitrided film prepared by thermal annealing in only NH3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.