No abstract

A: We present a SEE and TID effect study of the novel monolithic pixel detector, X-CHIP-03, manufactured in a 180 nm SOI technology. The SEU cross section of the custom D flip-flops in the X-CHIP-03 ASIC has been evaluated using accelerated ions with LET ranging from 0.45 to 69 MeV•cm 2 •mg −1 . The global TID response of the X-CHIP-03 has been evaluated at a dose rate of 16.2 Gy•min −1 . The direct I-V measurements of transistor properties were made under identical radiation conditions using the predecessor X-CHIP-02 ASIC manufactured in the same technology, which contains the transistor testing matrices for TID measurements. K: Radiation damage to detector materials (solid state); Radiation damage to electronic components; Radiation-hard detectors; Radiation-hard electronics 1Corresponding author.

No abstract