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Vapor-deposited-diamond field emitters are fabricated using diamond film technology compatible with integrated circuit processing. The field emission data from p-type polycrystalline diamond films are presented. Field emission current in the range of 15 μA was detected at an electric field intensity of <20 MV/m at a pressure of 10−7 Torr. A current of approximately 50 nA was observed at a pressure up to 10−2 Torr in H2 environment.

Five different single field emitters and emitter arrays with flat or nonflat collector structures were selected from the literature to simulate the actual emitting area of the tip. The Poisson’s equation was solved under two different assumptions of emitting behavior; uniform electron emission from the whole tip area, and electron emission from only small part of the tip area. It was observed that the geometry factor β of an array is larger than that of a single emitter, which is believed to be partly responsible for exceedingly small computed value of emitting area α for multiemitter structures. Finite element analysis of single and multiemitter structures indicates that the large β values are due to the interemitter interactions in an array.

The integration of 193nm Lithography is close to full production for the 90nm node technology and shows potential for lithographic resolution down to the 65nm node. The quality of 193nm reticles including binary, EAPSM and AAPSM must be outstanding so that low K1 factor reticles may be used in production.One area of concern in the IC industry is haze contamination on the mask once the reticle has been exposed to ArF radiation. In this study, haze was found outside of the pellicle and on the quartz side of the mask. Standard throughpell inspections might miss the contamination, yet its severity can ultimately affect mask transmission. For this reason, DuPont Photomasks and Cypress joined forces to quickly decipher how it develops.In this investigation, tests were devised which altered conditions such as mask environment, exposure, traditional and advanced cleaning chemistry. This paper describes the relationship between surface and environmental photochemical reactions, the resultant growth, analysis, and how it is controlled.

A microchip containing gated field-emitter display (FED) cells is designed and fabricated using vapor-deposited ptype polycrystalline diamond films and employing an integrated circuit (IC)-compatible diamond film technology on oxidized 4in Si wafers. Current-voltage (I0V ) data, measured in a diode configuration at 10 06 torr, show Fowler-Nordheim (F-N) field emission behavior. A 1 2 4 pixel diamond gated display cell is demonstrated for the first time using phosphor-coated glass as an anode.Index Terms-CVD diamond films, diamond technology, field emission display.