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The authors report on the fabrication of a top-gate ZnO thin-film transistor (TFT) with a polymer dielectric/ferroelectric double-layer gate insulator that was formed on patterned ZnO through a sequential spin-casting process of 450-nm-thick poly-4-vinylphenol (PVP) and 200-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Compared to the single P(VDF/TrFE) layer, double layer shows remarkably reduced leakage current with the aid of the PVP buffer. TFT with the PVP/P(VDF/TrFE) double layer exhibits a field effect mobility of 0.36cm2∕V and a large memory hysteresis in the transfer characteristics due to the ferroelectric P(VDF/TrFE). The retention of the device lasted over 2h.

We report on the photoresponse from tetracene-based and pentacene-based thin-film transistors (TFTs) with semitransparent NiOx source/drain electrodes and SiO2∕p+-Si substrate. Both organic TFTs have been fabricated with identical channel thickness and device geometry. Compared with pentacene-based TFTs, the tetracene-TFT exhibited superior potentials as a photodetector in the visible and ultraviolet range although it showed a field mobility (μ=0.003cm2∕Vs) which is two orders of magnitude lower than that of the pentacene-based TFT (μ=∼0.3cm2∕Vs). The tetracene-TFT displayed a high photo-to-dark current ratio (Iph∕Idark) of 3×103, while that of the pentacene-TFT was only ∼10.

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