Effects of RF power variation on properties of ZnO thin films and electrical properties of p–n homojunction

Hwang, D. K.; Bang, Kyu Hyun; Jeong, Min Chang; Myoung, Jae Min

doi:10.1016/s0022-0248(03)01205-3

Cited by 100 publications

(49 citation statements)

References 19 publications

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“…These morphologies are due to the fact that sputtering power helps to increase the surface mobility of adatoms, which is required to form continuous films. 5,14,15) The surface diffusion of these adatoms was then enhanced by the higher sputtering power, which results in a provision of the momentum transfer to the growing surface. Figure 5 demonstrates the qualitative dependence of RMS roughness of the Cu films as a function of the sputtering power.…”

Section: )mentioning

confidence: 99%

Effect of Sputtering Power on the Nucleation and Growth of Cu Films Deposited by Magnetron Sputtering

Sohn

Lim

et al. 2010

Mater. Trans.

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Cu thin films were deposited on Si(100) substrates using direct current (DC) magnetron sputtering. We focused on the effect of sputtering DC power on the electrical, structural properties, and the nucleation and growth of Cu films during the initial stage of sputtering. The Cu films deposited at higher sputtering power showed strong crystallinity, low electrical resistivity in comparison with the Cu films deposited at lower sputtering power. Concerning the nucleation and growth of Cu films during initial stage of magnetron sputtering, it was found that the progress of the nucleation and growth of the Cu films at higher sputtering is much faster than those of the Cu films at lower sputtering power even though they have a similar nucleation and growth mechanism, and their relation to resultant microstructure was confirmed by atomic force microscopy.

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Section: )mentioning

confidence: 99%

Effect of Sputtering Power on the Nucleation and Growth of Cu Films Deposited by Magnetron Sputtering

Sohn

Lim

et al. 2010

Mater. Trans.

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“…The intensities of (111) and (200) orientation increase and being sharper as the sputtering power increases. This can be caused by the larger contribution of ejected higher energy particles to the growth of crystallized phase [7]. No recognizable orientation preferred changes are found either of with or without water-cooled substrate holder.…”

Section: Resultsmentioning

confidence: 89%

“…Then, the 100 nm thickness of nickel oxide was deposited as a sensitive layer by reactive RF sputter at room temperature and then it was patterned by lift-off method (6). For the forming self-supporting structure of the micro-bridge, Si 3 N 4 and PI was removed by RIE and oxygen plasma asher, respectively (7,8). The fabricated micro-bolometer structure was inspected by using field emission scanning electron microscopy (FE-SEM).…”

Section: Resultsmentioning

confidence: 99%

NiO Films Formed at Room Temperature for Microbolometer

Jung¹,

Koo²,

Lee³

et al. 2013

Journal of Sensor Science and Technology

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Nickel oxide films using RF sputter was formed on the SiO 2 /Si substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about 34.25 Ω cm. And it was reduced to 18.65 Ω cm according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of 34.25 Ω cm was -2.01 %/ o C. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images. Received : Aug. 1, 2013, Revised : Sep. 24, Accepted : Sep. 25, 2013 This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/bync/3.0)which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Keywords

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“…As far as the fabrication procedures of these transparent diodes are concerned, most of the groups used physical routes such as pulsed laser deposition (PLD) [4,7,11,12], reactive evaporation, magnetron sputtering, thermal coevaporation, radio frequency (r.f.) magnetron sputtering, reactive sputtering [5,9,13,14], laser doping [15] etc. Additionally, most of these diode structures consist of het-erojunctions like strontium copper oxide/zinc oxide (ZnO) [4,7], copper yttrium oxide/ZnO [9,10], CuAlO 2 /ZnO [11] etc.…”

Section: Introductionmentioning

confidence: 99%

“…Additionally, most of these diode structures consist of het-erojunctions like strontium copper oxide/zinc oxide (ZnO) [4,7], copper yttrium oxide/ZnO [9,10], CuAlO 2 /ZnO [11] etc. as well as homojunctions such as p-CuInO 2 : Ca/nCuInO 2 : Sn [12], p-ZnO: P/n-ZnO [15], p-ZnO: As/n-ZnO [13] etc.…”

Section: Introductionmentioning

confidence: 99%

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Banerjee¹,

Chattopadhyay²

2008

Open Physics

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We report on the fabrication of all transparent heterojunction thin film diodes of the form glass/n-ZnO: Al/p-CuAlO2 produced by a combinatorial chemical and physical technique and on a study of their electro-optical properties. The n-ZnO: Al layer was deposited by a sol-gel-dip-coating process whereas the p-CuAlO2 layer was deposited by direct current sputtering techniques. The diode structure, with a total thickness of 1100 nm showed around 60% transmittance in the visible region. The current-voltage characteristics of the device showed a rectifying nature, with a low turn-on voltage around 0.8 V, having a rectification ratio > 50 at ± 2 V. The low turn-on voltage and moderate visible transmittance of the transparent diode indicate its potential application in the field of “Transparent” or “Invisible Electronics”.

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Effects of RF power variation on properties of ZnO thin films and electrical properties of p–n homojunction

Cited by 100 publications

References 19 publications

Effect of Sputtering Power on the Nucleation and Growth of Cu Films Deposited by Magnetron Sputtering

Effect of Sputtering Power on the Nucleation and Growth of Cu Films Deposited by Magnetron Sputtering

NiO Films Formed at Room Temperature for Microbolometer

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

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