Nickel oxide films using RF sputter was formed on the SiO 2 /Si substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about 34.25 Ω cm. And it was reduced to 18.65 Ω cm according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of 34.25 Ω cm was -2.01 %/ o C. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images. Received : Aug. 1, 2013, Revised : Sep. 24, Accepted : Sep. 25, 2013 This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/bync/3.0)which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Keywords

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We examined the AlGaN buffer layer dependent photo-response characteristics of the metalsemiconductor-metal (MSM) UV photodetectors (PDs). In the AlGaN buffer layer PD sample, the peak photo-current was of 4.5 ȝA at 5 V for 365 nm and dark current level ws 4 pA at 1 V. The UV/visible rejection ratio of AlGaN buffer sample was higher than 10 4 and HT-GaN/LT-AlN sample was 10 2 at 1 V, respectively. We observed a UV-A selective (or band-pass-like) response behavior near the 360~370 nm range. Index Terms -GaN, UV photodetector, UV-A selective, AlGaN buffer layer.