Near-edge X-ray absorption fine structure spectroscopy (NEXAFS) is utilized to provide insight into surface chemical effects in model photoresist films. First, NEXAFS was used to examine the resist/air interface including surface segregation of a photoacid generator (PAG) and the extent of surface deprotection in the film. The concentration of PAG at the resist-air interface was higher than the bulk concentration, which led to a faster deprotection rate at that interface. Second, a NEXAFS depth profiling technique was utilized to probe for compositional gradients in model resist line edge regions. In the model line edge region, the surface composition profile for the developed line edge was dependent on the post exposure bake time.

Elastic incoherent neutron scattering is employed to parameterize changes in the atomic/molecular mobility in lithographic polymers as a function of film thickness. Changes in the 200 MHz and faster dynamics are estimated in terms of a harmonic oscillator model and the corresponding Debye-Waller factor mean-square atomic displacement ͗u 2 ͘. We generally observe that relatively large ͗u 2 ͘ values in the glassy state lead to a strong suppression of ͗u 2 ͘ when the polymer is confined to exceedingly thin films. In contrast, this thin film suppression is diminished or even absent if ͗u 2 ͘ in the glass is relatively small. We further demonstrate that highly localized side group or segmental dynamics of hydrogen-rich moieties, such as methyl groups, dominate ͗u 2 ͘ and that thin film confinement apparently retards these motions. With respect to photolithography, we demonstrate that a reduced ͗u 2 ͘ in exceedingly thin model resist films corresponds to a decrease in the reaction front propagation kinetics.

In this paper, the utilization of lithographic materials for semiconductor patterning applications based on optical and EUV radiation sources is reviewed. Photoresist platforms including novolac, chemically amplified, chain scission, molecular and inorganic materials are discussed in relation to their chemistry, design, processing, and performance. If the focus of Moore's Law 1.0 was on laterally scaling the number of components on a single chip, Moore's Law 2.0 can be understood as the coming era of 3D scaling, where the improved performance from 2D shrinking is replaced by integrated AI, 3D Packaging, 3D transistors and new types of memory, among other enabling enablers. As the historical patterning challenges faced by the lithographic industry to scale down semiconductor devices over multiple technology nodes are reviewed from a materials perspective, insight is given regarding future patterning materials utilization and the importance of back-implementing leading-edge materials for Moore's Law 2.0 patterning applications.

In this paper, we will outline the approach for optimizing the illumination conditions to print three-dimensional images in resist stacks of varying sensitivity in a single exposure. The algorithmic approach for acheiving both optimal common and weakest window is presented. Results will be presented which demonstrate the ability of the technique to create threedimensional structures. The performance of the common and weakest window formulation will be explored using this approach. Additionally, due to physical restrictions there are limitations to the type of patterns that can be printed with a single exposure in this manner, thus the abilities of such a technique will be explored.