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Bulk antimony (Sb) doped germanium (n-Ge) samples with doping concentrations ranging between 7.0 × 1014 cm−3 and 2.5 × 1015 cm−3 were exposed to a dc-hydrogen or helium plasma. Hydrogen exposure resulted in the introduction of a single prominent defect level at EC −0.31 eV. Exposing similar samples to He plasmas introduced the same electron trap. The trap concentration increased linearly with dopant concentration suggesting that Sb may be a component of this plasma-induced trap. Thermal annealing kinetics studies suggested that this defect anneals out by diffusion.

ZnO nanorods were synthesized on a seed layer coated glass substrate using chemical bath deposition (CBD). Prior to growth, a seed layer had been prepared via ultrasonic spray pyrolysis method. The aim was to explore the influence of varying the chemical bath deposition conditions namely: growth time, bath temperature and concentration levels of the precursor on the orientation, structural, optical and vibrational properties of the subsequently grown nanorods. The presence of ZnO nanorods resembling the hexagonal-wurtzite structure having preference of orientation along the c-axis and varying crystallinity under different growth parameters was confirmed by X-ray diffraction (XRD). Scanning Electron Microscopy (SEM) acquired images of uniformly arranged and vertically oriented ZnO nanorods grown at a relatively higher bath temperature of 90 °C and shorter growth period of 2 h. UV/Vis/NIR spectrophotometer measurements revealed an optical transmittance of between 50 – 70 % for the nanorods. Raman spectroscopy results confirmed the presence of Raman active E 2(low) and E 2(high) modes corresponding to 98 cm −1 and 478 cm −1 belonging to the hexagonal ZnO phase. This work shows that the orientation, structural, optical and vibrational properties of the grown nanorod structures are controlled via alteration of the growth parameters.