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A study of the relationship between the macrosteps caused by the substrate misorientation and dislocation nucleation in MOVPE‐grown InGaAs/GaAs is presented. The macrosteps could favour strain relaxation and the decrease of the critical thickness, also by generation of misfit dislocations in the 1/2〈110〉{011} glide system, as they can provide sites for stress accumulation above the average value far from the macrosteps. This adds up to the enhanced homogeneous dislocation nucleation associated with the offcut angle. The use of offcut substrates thus produces both compositional inhomogeneities and an increase of the overall dislocation density.

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