Transmission electron microscopy and X-ray diffraction investigation of In segregation in MOVPE-grown InGaAs-based MQWs with either GaAs or AlGaAs barriers

Frigeri, C.; Paola, A. Di; Gambacorti, N.; Ritchie, D.M.; Longo, F.; Giovanna, M. Della

doi:10.1016/0921-5107(94)90080-9

Cited by 13 publications

(7 citation statements)

References 14 publications

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“…It is steep at the upper interface and graded at the lower interface, which is in contrast to interfaces in classical InGaAs/ GaAs systems. In these structures grading is observed at the upper interface and can be explained by In segregation at the growth surface 22,23 . Figure 5 shows a ͑200͒ dark field ͑DF͒ micrograph of the same area shown in Fig.…”

Section: Resultsmentioning

confidence: 91%

Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Grillo

Albrecht

Remmele

et al. 2001

Journal of Applied Physics

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Articles you may be interested inStrain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition Appl. Phys. Lett. 95, 051102 (2009); A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum wellWe propose a method that solves the problem of the independent determination of the indium and nitrogen concentrations in a strained quaternary InGaAsN superlattice. The method is experimentally based on the simultaneous measurement: ͑i͒ of the tetragonal lattice distortion of the unit cell from high resolution micrographs and ͑ii͒ of the intensity of the chemically sensitive ͑002͒ reflection from dark field images. As an example, we evaluate InGaAsN quantum wells with a nominal N concentration of 1.7% and with In concentrations of 10%, 20%, or 35%. We reveal local fluctuations of the In and N concentrations over distances down to 4 nm with a sensitivity of 0.1% for N and 1% for In fluctuations in this distance range.

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Section: Resultsmentioning

confidence: 91%

Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Grillo

Albrecht

Remmele

et al. 2001

Journal of Applied Physics

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“…The three mechanisms are sketched in Figure 7 . Indium surface segregation has been shown for other In-containing systems such as InGaAs/GaAs [ 23 , 24 ]. For the InGaP/GaAs system, the action of In segregation has been proven by experiments, showing that the growth of a thin GaP layer on the top of InGaP, before GaAs is grown, is effective in preventing the formation of the quaternary interlayer because In segregates into the interposed GaP layer and cannot reach the GaAs [ 5 ].…”

Section: Resultsmentioning

confidence: 99%

“…In segregation is a kinetically driven process and depends strongly on the growth temperature [ 5 ]. It may occur within the first few monolayers of the layer grown next [ 5 , 23 , 24 ]. P/As exchange across the interface should be excluded according to our results.…”

Section: Resultsmentioning

confidence: 99%

Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

et al. 2011

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Electron beam methods, such as cathodoluminescence (CL) that is based on an electron-probe microanalyser, and (200) dark field and high angle annular dark field (HAADF) in a scanning transmission electron microscope, are used to study the deterioration of interfaces in InGaP/GaAs system with the GaAs QW on top of InGaP. A CL emission peak different from that of the QW was detected. By using HAADF, it is found that the GaAs QW does not exist any longer, being replaced by extra interlayer(s) that are different from GaAs and InGaP because of atomic rearrangements at the interface. The nature and composition of the interlayer(s) are determined by HAADF. Such changes of the nominal GaAs QW can account for the emission observed by CL.

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“…Although from our measurements we cannot know which of the two interfaces is graded ͑and it is even possible that both interfaces are involved in a grading͒, it is more likely that the upper interface plays the dominant role because a segregation of indium in the GaAs cap layer has often been detected. 7,25,26 …”

Section: Discussionmentioning

confidence: 99%

Characterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction

Rose

Pietsch

Zeimer

1997

Journal of Applied Physics

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Articles you may be interested inInGaAs ∕ InP quantum well intermixing studied by high-resolution x-ray diffraction and grazing incidence x-ray analysis J. Appl. Phys. 97, 093519 (2005); 10.1063/1.1870114 Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates J. Appl. Phys. 97, 063512 (2005); 10.1063/1.1862769In-plane strain distribution in free-standing GaAs/InGaAs/GaAs single quantum well surface nanostructures on GaAs[001] J.

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Transmission electron microscopy and X-ray diffraction investigation of In segregation in MOVPE-grown InGaAs-based MQWs with either GaAs or AlGaAs barriers

Cited by 13 publications

References 14 publications

Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

Characterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction

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