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Magnetization reversal and magnetoresistance behavior of perpendicularly magnetized [Co/Pd]4/Au/[Co/Pd]2 nanowires J. Appl. Phys. 112, 073902 (2012) Electric-field control of CoFeB/IrMn exchange bias system J. Appl. Phys. 112, 064120 (2012) Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in threeterminal geometry Appl. Phys. Lett. 101, 132411 (2012) Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by halfmetallicity of Co2MnSi and coherent tunneling Appl. Phys. Lett. 101, 132418 (2012) Interface mediated ferromagnetism in bulk CuO/Cu2O composites Appl.

Strong in-plane magnetic field pulses of 2 -4.4 ps duration are used to study magnetization reversal in perpendicularly magnetized Co͞Pt films. Ring domains, reminiscent of the field contour during exposure, are observed later with Kerr microscopy. Their radii represent switching fields which are in quantitative agreement with the coherent rotation model. The observation of intrinsic transition broadening is attributed to the existence of static and dynamic fluctuations of the magnetic anisotropy. [S0031-9007(98)07344-X]

In low resistance-area product MgO magnetic tunnel junction nanopillars, we observe high integrated power (up to 43nW), narrow linewidth (down to 10MHz), spin transfer induced microwave emission at frequencies up to 14GHz due to precession of the free layer magnetization at room temperature. Although all devices were fabricated on the same wafer, they present bimodal transport and precessional characteristics. The devices in which the narrowest linewidths were observed exhibited low resistance and tunneling magnetoresistance (30%), while maintaining large integrated power.

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