Articles you may be interested inImproved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer Noise characteristics of emission current from conductive diamond-like carbon thin films coating on cone shaped silicon field emitters Enhanced electron field emission from hydrogen-free amorphous carbon ͑a-C͒ films deposited on ZnO-tip-array-coated Si substrates was studied. Both the ZnO tip array and the a-C films were deposited by filtered arc deposition. Compared with the a-C film deposited on Si substrates, the a-C film on ZnO had a lower threshold field ͑4.5 V/m͒, higher field emission current density ͑0.215 mA/cm 2 at 14.3 V/m͒ and higher emission site density ͑Ͼ2ϫ10 3 /cm 2 at 20 V/m͒. The introduction of the ZnO tip array provides high local geometric electric-field enhancement for the a-C film. On the other hand, the amount of excess Zn in the ZnO film provides better conductivity. The result is that the electrons can be easily penetrated into the a-C films, which enhances the field emission properties.

Advances have been made in the development of carbon nanotube field emission displays. We fabricated a 25 inch diagonal, full color RGB, video display using standard screen printing techniques. The pixel pitch is compatible with an approximately 90 inch diagonal HDTV display and the fabrication processes are scalable to large area displays.

Noise characteristics of emission current from conductive diamond-like carbon thin films coating on cone shaped silicon field emitters Electron field emission from a patterned diamondlike carbon flat cathode A 200-nm-thick diamond-like carbon film was prepared on Ti-deposited Si (Ͻ0.01 ⍀ cm͒ using a filtered arc deposition technique. Field-emission properties of it are enhanced as compared to films deposited on Si, showing an increased current and emission site density (ϳ1.2ϫ10 3 /cm 2 ). A patterned diamond-like carbon flat thin film on Ti-deposited Si fabricated by the oxygen reactive ion-beam etching technique shows further enhanced field-emission properties. An emission site density of 3ϫ10 3 /cm 2 was obtained. Field emission could be observed at a field value as low as 2.1 V/m. It is shown that the low potential barrier at the interface and high local geometric electric field enhancement around the edges produced by reactive ion-beam etching are possible causes for the enhanced effects. It can also be explained by the Geis' metal-diamond-vacuum triple junction emission mechanism.

Electron field emission from diamond-like carbon (DLC) films deposited on Si, Ti/Si, and Au/Si substrates by a filtered arc deposition technique was studied. As compared to DLC/Si and DLC/Au/Si, electron field emission from DLC/Ti/Si was enhanced, showing an increased emission current density and emission site density (∼1.2×103/cm2). An emission site density up to 2.2∼2.2×103/cm2 was obtained after the DLC/Ti/Si had been annealed at 430 °C for 0.5 h. A patterned DLC/Ti/Si array fabricated by the oxygen reactive ion beam etching technique showed further field emission enhancement. An emission site density up to 3.2∼3.5×103/cm2 and a threshold field as low as 2.1 V/μm were achieved. It was shown that the low potential barrier at the interface and high local geometric electric field enhancement around the edges produced by reactive ion beam etching were possible causes of the enhancing effects. It could also be explained by Geis’ metal-diamond-vacuum triple junction emission mechanism.