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Undoped and indium‐doped ZnO thin films are deposited by the spray pyrolysis process onto glass substrates. The effects of starting solution composition and indium doping on the structural, electrical, and optical properties are investigated. The surface morphology of the deposited films is a strong function of the source compounds. Thus two distinct morphologies with large difference in the average grain size are obtained by using separately zinc chloride and zinc acetate. The polycrystalline nature with no second phases is observed by X‐ray diffraction. Indium doping leads to a very low resistivity of about 10−3 Ω cm. High transparency of the films, more than 85% in the visible range, is observed.

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The minority carrier diffusion length in polycrystalline silicon has been strongly improved by using several gettering processes. These processes include different surface treatments followed by conventional thermal annealing (CTA) performed at temperatures between 800 and 950 °C. The n+p structures with a back lapped surface exhibit a maximum increase of the diffusion length from 35 to 140 μm for 45 min annealing duration at temperatures of 900 and 950 °C. The realization of a back surface field (BSF) on the lapped surface by aluminum deposition followed by a CTA cycle at 950 °C, with slow cooling rate (2 °C/min) induces a strong additional gettering, resulting in the increase of the minority carrier diffusion length up to 350%.

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