The output energy characteristics of a 2.24 kW grid-connected micro-inverter type photovoltaic power generation system installed in Tashkent were studied using PVsyst software. In the best conditions, it operated for about 10 h a day and produced 14.65 kW h of power. Although PVsyst predicted 79.7%, the actual performance ratio (PR) was very high, at 95.5%. Analysis of the loss parameters revealed that the module's temperature influence was the most significant (-8.5%), followed by the inverter's switching loss (-5.7%).

A comparative study is carried out for etching a surface with negative and positive ions, and the results show completely opposite physical processes occur on a silicon surface. Irradiation with positive ions exhibits oxide removal, while irradiation with negative ions shows an intense oxidation of the sample surface. Technology for low-temperature ion cleaning and the electron-spectrometric control of silicon wafers has been developed. This technology has been shown that only irradiation with caesium ions followed by annealing at 650 °C leads to an atomically clean silicon surface for several minutes, which is dependent on the pressure of residual gases under vacuum. After cleaning in a vacuum of 10 -9 Pa, the silicon surface begins to oxidize again within 10 min.

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