We have investigated the electrical properties and current transport mechanisms of W/p-InP Schottky diode using current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-frequency (G-f) techniques at room temperature. The W/p-InP Schottky diode exhibits a good rectifying behavior. Measurements show that the Schottky barrier height (SBH) and ideality factor of the W/p-InP Schottky diode are 0.84 eV (I-V)/0.98 eV (C-V) and 1.24, respectively. Also, the SBH and series resistance R s of the diode are extracted by Cheung's functions and the values are in good agreement with each other. Ohmic and space charge-limited conduction mechanisms are found to govern the current flow in the W/p-InP Schottky diode at low and high forward bias conditions, respectively. Experimental results reveal that the Poole-Frenkel mechanism is found to be dominant in the reverse bias region of W/p-InP Schottky diode. Further, the interface state density N ss and their relaxation times s of the W/p-InP Schottky diode are estimated from the forward bias C-f and G-f characteristics and the values are in the range from 1.95 9 10 13 eV -1 cm -2 and 3.38 9 10 -5 s at (0.81-E V ) eV to 1.78 9 10 13 eV -1 cm -2 and 2.78 9 10 -6 s at (0.30-E V ) eV, respectively. Both the N ss and s show an exponential rise with bias from the top of the valance band toward the mid gap.

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