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In recent times, the utilization of cloud computing VMs is extremely enhanced in our day-to-day life due to the ample utilization of digital applications, network appliances, portable gadgets, and information devices etc. In this cloud computing VMs numerous different schemes can be implemented like multimedia-signal-processing-methods. Thus, efficient performance of these cloud-computing VMs becomes an obligatory constraint, precisely for these multimedia-signal-processing-methods. However, large amount of energy consumption and reduction in efficiency of these cloud-computing VMs are the key issues faced by different cloud computing organizations. Therefore, here, we have introduced a dynamic voltage and frequency scaling (DVFS) based adaptive cloud resource re-configurability (ACRR) technique for cloud computing devices, which efficiently reduces energy consumption, as well as perform operations in very less time. We have demonstrated an efficient resource allocation and utilization technique to optimize by reducing different costs of the model. We have also demonstrated efficient energy optimization techniques by reducing task loads. Our experimental outcomes shows the superiority of our proposed model ACRR in terms of average run time, power consumption and average power required than any other state-of-art techniques.

Abstract:In recent semiconductor designs, the major key factors: Competent device simulations, precise device characterization, well power optimization, new architectural design and cost-effective fabrication drives the designers attention towards multi gate transistors as an alternative to MOSFET. Non planner device structures are a competitive edge over planner devices. Silicon-on-Insulator (SOI) FinFETs are hopeful among variety of multi-gate structures as they have simple fabrication, Superior gate control, lower subthreshold leakage and minimized susceptibility to process variations. Low leakage memory cells play a significant role of power consumption in the recent VLSI Systems. In this study, Ultra-low Voltage Asymmetric Short Gate (UVASG) FinFET is modeled with TCAD tools for low leakages and FinFET based SRAM has been proposed as a substitute for the bulk devices.

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