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We have designed and simulated a 10-nanometer regime gate High Electron Mobility Transistor (HEMT) with an undoped region (UR) under the gate with high k dielectric as hafnium oxide (HfO2). The thickness of metal gate(G) and undoped regions are equal but length of channel(C) is not equivalent. The proposed Undoped under the gate dielectric High Electron Mobility Transistor reduces the maximum electric field(V) in the channel region and increases the drain current significantly. The High-K dielectric High Electron Mobility Transistor structure obtained a saturated Ion current of 60% higher than the conventional structure. For High critical Power and High-frequency Power transmission Amplifiers utilizes the AlGaN/GaN/SiC-based High Electron Mobility Transistor with an undoped region under the gate with High-K Hafnium oxide. The Proposed advanced High Electron Mobility Transistor Produces a higher Drain current (Id), 54% high transconductance (Gm) with Low On-Resistance (Ron), and High conductivity in comparison to typical High Electron Mobility Transistor. In Addition to these improved characteristics, the Electric field along the Y direction is also observed. The proposed structure formed by Low-k Dielectric materials in the process of Silicon Dioxide(SiO2) and High-k dielectric being Titanium Dioxide (TiO2) and Hafnium Oxide (HfO2) created more opportunities in Power electronics and radio frequency operations.